IXTA2N100P
- Mfr.Part #
- IXTA2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO263
- Stock
- 292
- In Stock :
- 292
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 1000 V
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 1kV
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTA2
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 2
- Manufacturer :
- IXYS
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Height :
- 4.83 mm
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 5A
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 86W (Tc)
- Power Dissipation :
- 86W
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Package :
- Tube
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.41 mm
- Rise Time :
- 29ns
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Drain-source On Resistance-Max :
- 7.5 Ω
- Width :
- 9.65 mm
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 2A
- Number of Elements :
- 1
- Fall Time (Typ) :
- 27 ns
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 86 W
- Configuration :
- Single
- Mounting Style :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Series :
- Polar™
- Published :
- 2008
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- JEDEC-95 Code :
- TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 2A
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-263 (IXTA)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 80 ns
- Power Dissipation-Max :
- 86W Tc
- Datasheets
- IXTA2N100P

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTA2N100P Applications
There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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