IXTA2N100P

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Mfr.Part #
IXTA2N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO263
Stock
292
In Stock :
292

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
4
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
DS Breakdown Voltage-Min :
1000 V
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
1kV
Transistor Polarity :
N-Channel
Base Product Number :
IXTA2
Transistor Element Material :
SILICON
Number of Terminals :
2
Manufacturer :
IXYS
Terminal Form :
Gull wing
JESD-609 Code :
e3
Height :
4.83 mm
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
5A
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
86W (Tc)
Power Dissipation :
86W
FET Feature :
--
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Package :
Tube
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.41 mm
Rise Time :
29ns
Avalanche Energy Rating (Eas) :
150 mJ
Drain-source On Resistance-Max :
7.5 Ω
Width :
9.65 mm
Product Status :
Active
Continuous Drain Current (ID) :
2A
Number of Elements :
1
Fall Time (Typ) :
27 ns
Product Category :
MOSFET
Number of Channels :
1 Channel
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
86 W
Configuration :
Single
Mounting Style :
SMD/SMT
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4.5V @ 100μA
Element Configuration :
Single
Radiation Hardening :
No
Reach Compliance Code :
not_compliant
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Series :
Polar™
Published :
2008
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
2A Tc
JEDEC-95 Code :
TO-263AB
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
2A
Drain to Source Voltage (Vdss) :
1000V
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
2
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXTA)
Mounting Type :
Surface Mount
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 25V
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
24.3nC @ 10V
Case Connection :
DRAIN
Mount :
Surface Mount
Turn-Off Delay Time :
80 ns
Power Dissipation-Max :
86W Tc
Datasheets
IXTA2N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, IXTA2N100P pinout, IXTA2N100P datasheet PDF, IXTA2N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA2N100P


N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA2N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA2N100P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)


IXTA2N100P Applications


There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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