IXTA28P065T
- Mfr.Part #
- IXTA28P065T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 65V 28A TO263
- Stock
- 1,018
- In Stock :
- 1,018
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Published :
- 2010
- Drain Current-Max (Abs) (ID) :
- 28 A
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 15V
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminals :
- 2
- JEDEC-95 Code :
- TO-263AB
- Terminal Finish :
- PURE TIN
- DS Breakdown Voltage-Min :
- 65 V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.045Ohm
- Factory Lead Time :
- 28 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-263 (IXTA)
- Polarity/Channel Type :
- P-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- -65V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2030pF @ 25V
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Base Product Number :
- IXTA28
- Product Status :
- Active
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Type :
- 1 P-Channel
- Transistor Polarity :
- P-Channel
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Vgs (Max) :
- ±15V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 83W (Tc)
- Number of Terminations :
- 2
- Series :
- TrenchP™
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Power Dissipation :
- 83W
- Surface Mount :
- yes
- Pulsed Drain Current-Max (IDM) :
- 90A
- Power Dissipation-Max :
- 83W Tc
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 14A, 10V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 28A
- Power Dissipation-Max (Abs) :
- 83 W
- Drain to Source Voltage (Vdss) :
- 65V
- Datasheets
- IXTA28P065T

P-Channel Tube 45m Ω @ 14A, 10V ±15V 2030pF @ 25V 46nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA28P065T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2030pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of -65V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -65V.28 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 65 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 65V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA28P065T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 90A.
a 65V drain to source voltage (Vdss)
IXTA28P065T Applications
There are a lot of IXYS
IXTA28P065T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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