IXTA1N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

17 Weeks

JEDEC-95 Code :

TO-263AB

Drain Current-Max (Abs) (ID) :

1A

Maximum Operating Temperature :

+ 150 C

Series :

Polar™

Package :

Tube

Transistor Polarity :

N-Channel

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

331pF @ 25V

Power Dissipation-Max (Abs) :

50 W

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

55 ns

Continuous Drain Current (ID) :

1A

Rise Time :

26ns

Power Dissipation-Max :

50W Tc

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

1A Tc

RoHS :

Details

Product Type :

MOSFET

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

1000V

Case Connection :

DRAIN

Mounting Style :

SMD/SMT

Drain-source On Resistance-Max :

15 Ω

Number of Terminals :

2

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Height :

4.83 mm

Vgs (Max) :

±20V

Supplier Device Package :

TO-263 (IXTA)

Pin Count :

4

ECCN Code :

EAR99

Published :

2008

Drain to Source Breakdown Voltage :

1kV

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

15 Ω @ 500mA, 10V

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTA1

Configuration :

Single

Power Dissipation (Max) :

50W (Tc)

DS Breakdown Voltage-Min :

1000 V

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

100 mJ

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Power Dissipation :

50W

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

24 ns

Channel Mode :

Enhancement

Terminal Form :

Gull wing

Transistor Type :

1 N-Channel

Mount :

Surface Mount

Surface Mount :

yes

Terminal Position :

Single

Product Category :

MOSFET

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

1.8A

Reach Compliance Code :

not_compliant

Brand :

IXYS

Width :

9.65 mm

Number of Elements :

1

Length :

10.41 mm

JESD-609 Code :

e3

Element Configuration :

Single

Manufacturer :

IXYS

Polarity/Channel Type :

N-Channel