IXTA1N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

--

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

1000V

Number of Channels :

1 Channel

Factory Lead Time :

28 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

19ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Package :

Tube

Base Product Number :

IXTA1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

6A

Published :

2004

Mount :

Surface Mount

Packaging :

Tube

Terminal Position :

Single

Number of Pins :

3

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

200 mJ

Element Configuration :

Single

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

11 Ω @ 1A, 10V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

1.5A

Case Connection :

DRAIN

FET Feature :

--

Power Dissipation-Max (Abs) :

54 W

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-263AA

Resistance :

11Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Turn-Off Delay Time :

20 ns

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS Corporation

Drain Current-Max (Abs) (ID) :

1.5 A

Supplier Device Package :

TO-263 (IXTA)

Power Dissipation (Max) :

54W (Tc)

Number of Terminals :

2

Reach Compliance Code :

not_compliant

Product Status :

Active

Channel Mode :

Enhancement

Fall Time (Typ) :

18 ns

Drain to Source Breakdown Voltage :

1kV

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

DS Breakdown Voltage-Min :

1000 V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

54W

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Drain-source On Resistance-Max :

11 Ω

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation-Max :

54W Tc

Additional Feature :

AVALANCHE RATED