IXTA180N10T
- Mfr.Part #
- IXTA180N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 480W Tc
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 25A, 10V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Product Category :
- MOSFET
- Series :
- TrenchMV™
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 180A
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 480W
- Pin Count :
- 4
- FET Feature :
- --
- Height :
- 4.5 mm
- Number of Elements :
- 1
- Published :
- 2008
- Width :
- 9.2 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Length :
- 9.9 mm
- Power Dissipation (Max) :
- 480W (Tc)
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Transistor Application :
- SWITCHING
- Mounting Style :
- SMD/SMT
- Rise Time :
- 54ns
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e3
- Resistance :
- 6.4mOhm
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Tradename :
- HiPerFET
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 31 ns
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Mount :
- Surface Mount
- Product Status :
- Active
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 450A
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Voltage (Vdss) :
- 100V
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-263 (IXTA)
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Product Type :
- MOSFET
- Base Product Number :
- IXTA180
- Element Configuration :
- Single
- Factory Lead Time :
- 28 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Datasheets
- IXTA180N10T

N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA180N10T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 450A.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA180N10T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXTA180N10T Applications
There are a lot of IXYS
IXTA180N10T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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