IXTA180N10T

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Mfr.Part #
IXTA180N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 180A TO263
Stock
50
In Stock :
50

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
480W Tc
Package :
Tube
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 25A, 10V
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Product Category :
MOSFET
Series :
TrenchMV™
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
180A
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
42 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Power Dissipation :
480W
Pin Count :
4
FET Feature :
--
Height :
4.5 mm
Number of Elements :
1
Published :
2008
Width :
9.2 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
151nC @ 10V
Length :
9.9 mm
Power Dissipation (Max) :
480W (Tc)
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Transistor Application :
SWITCHING
Mounting Style :
SMD/SMT
Rise Time :
54ns
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Vgs (Max) :
±30V
JESD-609 Code :
e3
Resistance :
6.4mOhm
Terminal Finish :
Matte Tin (Sn)
Drain to Source Breakdown Voltage :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) :
750 mJ
Transistor Element Material :
SILICON
Configuration :
Single
Tradename :
HiPerFET
Number of Channels :
1 Channel
Fall Time (Typ) :
31 ns
Lead Free :
Lead Free
Packaging :
Tube
Mount :
Surface Mount
Product Status :
Active
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) :
450A
Maximum Operating Temperature :
+ 175 C
Drain to Source Voltage (Vdss) :
100V
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXTA)
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Product Type :
MOSFET
Base Product Number :
IXTA180
Element Configuration :
Single
Factory Lead Time :
28 Weeks
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Datasheets
IXTA180N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N10T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA180N10T pinout, IXTA180N10T datasheet PDF, IXTA180N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA180N10T


N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA180N10T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 450A.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA180N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)


IXTA180N10T Applications


There are a lot of IXYS
IXTA180N10T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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