IXTA16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Voltage - Rated DC :

500V

Transistor Polarity :

N-Channel

Length :

10.41 mm

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

16 A

Height :

4.83 mm

Terminal Position :

Single

Power Dissipation-Max (Abs) :

300 W

Lead Free :

Lead Free

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

RoHS :

Details

FET Feature :

--

Avalanche Energy Rating (Eas) :

750 mJ

Power Dissipation :

300W

Packaging :

Tube

Surface Mount :

yes

Base Product Number :

IXTA16

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Turn-Off Delay Time :

70 ns

Pbfree Code :

yes

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Manufacturer :

IXYS

Factory Lead Time :

28 Weeks

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Number of Pins :

3

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

400m Ω @ 8A, 10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Rise Time :

28ns

Supplier Device Package :

TO-263 (IXTA)

Current Rating :

16A

Pin Count :

4

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

500V

Brand :

IXYS

Fall Time (Typ) :

25 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

16A

Published :

2006

Mounting Style :

SMD/SMT

JEDEC-95 Code :

TO-263AB

Package :

Tube

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

35 A

Mount :

Surface Mount

Configuration :

Single

Terminal Form :

Gull wing

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Vgs (Max) :

±30V

Width :

9.65 mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain-source On Resistance-Max :

0.4Ohm

Power Dissipation-Max :

300W Tc

DS Breakdown Voltage-Min :

500 V

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Series :

PolarHV™

Power Dissipation (Max) :

300W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V