IXTA160N10T7

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Mfr.Part #
IXTA160N10T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 100V 160A TO263-7
Stock
45,494
In Stock :
45,494

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Rise Time :
61ns
Tradename :
HiPerFET
Min Operating Temperature :
-55 °C
JESD-30 Code :
R-PSFM-G6
Mounting Style :
SMD/SMT
Rds On Max :
7 mΩ
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175 °C
Transistor Polarity :
N-Channel
Published :
2006
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Turn-Off Delay Time :
49 ns
RoHS :
Compliant
Brand :
IXYS
Pbfree Code :
yes
Power Dissipation :
430W
Fall Time (Typ) :
42 ns
Channel Mode :
Enhancement
JESD-609 Code :
e3
Subcategory :
MOSFETs
Height :
4.7 mm
Operating Temperature :
-55°C~175°C TJ
Power Dissipation (Max) :
430W (Tc)
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Pin Count :
4
Reach Compliance Code :
not_compliant
Number of Terminations :
6
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXTA160
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Width :
9.4 mm
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
500 mJ
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Length :
10.2 mm
FET Type :
N-Channel
Product Type :
MOSFET
Continuous Drain Current (ID) :
160A
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Package :
Tube
Drain to Source Resistance :
7 mΩ
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Number of Elements :
1
Drain-source On Resistance-Max :
0.007Ohm
Packaging :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Vgs (Max) :
±30V
Max Power Dissipation :
430 W
ECCN Code :
EAR99
Supplier Device Package :
TO-263-7 (IXTA..7)
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
100 V
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Pulsed Drain Current-Max (IDM) :
430A
Series :
TrenchMV™
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
100V
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Input Capacitance :
6.6 nF
Power Dissipation-Max :
430W Tc
Product Category :
MOSFET
Maximum Operating Temperature :
+ 175 C
Transistor Type :
1 N-Channel
Datasheets
IXTA160N10T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N10T7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:6, Number of Channels:1 Channel, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Mounting Type:Surface Mount, IXTA160N10T7 pinout, IXTA160N10T7 datasheet PDF, IXTA160N10T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N10T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA160N10T7


N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V 100 V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA160N10T7 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6600pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 49 ns.A maximum pulsed drain current of 430A is the maximum peak drain current rated for this device.MOSFETs have 7 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to operate this transistor, a voltage of 100 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA160N10T7 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430A.
single MOSFETs transistor is 7 mΩ
a 100 V drain to source voltage (Vdss)


IXTA160N10T7 Applications


There are a lot of IXYS
IXTA160N10T7 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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