IXTA14N60P
- Mfr.Part #
- IXTA14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO263
- Stock
- 290
- In Stock :
- 290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTA14
- Surface Mount :
- yes
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 600 V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Avalanche Energy Rating (Eas) :
- 900 mJ
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- FET Feature :
- --
- Configuration :
- Single
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 600V
- Drain-source On Resistance-Max :
- 0.55Ohm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-263AB
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 300W
- Rise Time :
- 27ns
- Product Category :
- MOSFET
- Width :
- 10.41 mm
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Packaging :
- Tube
- RoHS :
- Details
- Polarity/Channel Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Terminals :
- 2
- Drain Current-Max (Abs) (ID) :
- 14 A
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Current Rating :
- 14A
- Height :
- 4.83 mm
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 300 W
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Fall Time (Typ) :
- 26 ns
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Type :
- 1 N-Channel
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- Pulsed Drain Current-Max (IDM) :
- 42A
- Pin Count :
- 4
- Tradename :
- PolarHV
- Length :
- 9.65 mm
- Type :
- PolarHV Power MOSFET
- Turn-Off Delay Time :
- 70 ns
- Factory Lead Time :
- 28 Weeks
- Published :
- 2009
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Series :
- PolarHV™
- Voltage - Rated DC :
- 600V
- Supplier Device Package :
- TO-263 (IXTA)
- Continuous Drain Current (ID) :
- 14A
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Product Status :
- Active
- Terminal Form :
- Gull wing
- Channel Mode :
- Enhancement
- Mounting Style :
- SMD/SMT
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXTA14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA14N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14 A.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 42A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTA14N60P Applications
There are a lot of IXYS
IXTA14N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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