IXTA14N60P

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Mfr.Part #
IXTA14N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO263
Stock
290
In Stock :
290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Base Product Number :
IXTA14
Surface Mount :
yes
Number of Terminations :
2
DS Breakdown Voltage-Min :
600 V
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
600V
Avalanche Energy Rating (Eas) :
900 mJ
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Terminal Position :
Single
FET Feature :
--
Configuration :
Single
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Number of Pins :
3
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.55Ohm
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max) :
±30V
JEDEC-95 Code :
TO-263AB
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Power Dissipation :
300W
Rise Time :
27ns
Product Category :
MOSFET
Width :
10.41 mm
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Packaging :
Tube
RoHS :
Details
Polarity/Channel Type :
P-Channel
Transistor Element Material :
SILICON
Brand :
IXYS
Power Dissipation (Max) :
300W (Tc)
Number of Terminals :
2
Drain Current-Max (Abs) (ID) :
14 A
Reach Compliance Code :
not_compliant
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Current Rating :
14A
Height :
4.83 mm
Transistor Application :
SWITCHING
Terminal Finish :
Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Power Dissipation-Max (Abs) :
300 W
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Fall Time (Typ) :
26 ns
Mount :
Surface Mount
Lead Free :
Lead Free
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Power Dissipation-Max :
300W Tc
Pulsed Drain Current-Max (IDM) :
42A
Pin Count :
4
Tradename :
PolarHV
Length :
9.65 mm
Type :
PolarHV Power MOSFET
Turn-Off Delay Time :
70 ns
Factory Lead Time :
28 Weeks
Published :
2009
Package :
Tube
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Series :
PolarHV™
Voltage - Rated DC :
600V
Supplier Device Package :
TO-263 (IXTA)
Continuous Drain Current (ID) :
14A
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Product Status :
Active
Terminal Form :
Gull wing
Channel Mode :
Enhancement
Mounting Style :
SMD/SMT
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTA14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Type:PolarHV Power MOSFET, IXTA14N60P pinout, IXTA14N60P datasheet PDF, IXTA14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA14N60P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14 A.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 42A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXTA14N60P Applications


There are a lot of IXYS
IXTA14N60P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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