IXTA140N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Drain-source On Resistance-Max :

0.0054Ohm

Mounting Style :

SMD/SMT

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Type :

1 N-Channel

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Package :

Tube

Reach Compliance Code :

not_compliant

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

140A

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Manufacturer :

IXYS

Surface Mount :

yes

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

350A

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

55V

FET Feature :

-

Power Dissipation-Max :

250W Ta

Maximum Operating Temperature :

+ 175 C

Product Category :

MOSFET

Product Status :

Active

FET Type :

N-Channel

Tradename :

HiPerFET

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Series :

TrenchT2™

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4760pF @ 25V

Mounting Type :

Surface Mount

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Pin Count :

4

Supplier Device Package :

TO-263 (D2Pak)

Power Dissipation-Max (Abs) :

250 W

Number of Terminals :

2

Product Type :

MOSFET

Channel Mode :

Enhancement

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Base Product Number :

IXTA140

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Rise Time :

35 ns

Factory Lead Time :

28 Weeks

Power Dissipation (Max) :

250W (Ta)

JEDEC-95 Code :

TO-263AB

Avalanche Energy Rating (Eas) :

600 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 50A, 10V

Vgs (Max) :

±20V

Number of Elements :

1