IXTA130N10T7
- Mfr.Part #
- IXTA130N10T7
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 4,636
- In Stock :
- 4,636
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 24 Weeks
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 25A, 10V
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Published :
- 2008
- Number of Terminations :
- 6
- Transistor Polarity :
- N-Channel
- JESD-609 Code :
- e3
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 130 A
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G6
- Power Dissipation :
- 360W
- Fall Time (Typ) :
- 28 ns
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5080pF @ 25V
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max (Abs) :
- 360 W
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 350A
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- 100V
- Length :
- 10.41 mm
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Gate Charge (Qg) (Max) @ Vgs :
- 104nC @ 10V
- Series :
- TrenchMV™
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 360W Tc
- Terminal Finish :
- PURE TIN
- Drain to Source Voltage (Vdss) :
- 100V
- Manufacturer :
- IXYS
- Number of Terminals :
- 6
- DS Breakdown Voltage-Min :
- 100 V
- Supplier Device Package :
- TO-263 (IXTA)
- Mounting Type :
- Surface Mount
- Width :
- 9.65 mm
- Maximum Operating Temperature :
- + 175 C
- Package Shape :
- RECTANGULAR
- Product Category :
- MOSFET
- Height :
- 4.83 mm
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 130A
- Pin Count :
- 3
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-263
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Turn-Off Delay Time :
- 44 ns
- Rise Time :
- 47ns
- Base Product Number :
- IXTA130
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation (Max) :
- 360W (Tc)
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTA130N10T7

N-Channel Tube 9.1m Ω @ 25A, 10V ±20V 5080pF @ 25V 104nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA130N10T7 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 400 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5080pF @ 25V.This device has a continuous drain current (ID) of [130A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 130 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 350A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA130N10T7 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)
IXTA130N10T7 Applications
There are a lot of IXYS
IXTA130N10T7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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