IXTA130N065T2

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Mfr.Part #
IXTA130N065T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 65V 130A TO263
Stock
18,954
In Stock :
18,954

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-263AB
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Mount :
Surface Mount
Tradename :
HiPerFET
JESD-609 Code :
e3
Continuous Drain Current (ID) :
130A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
Base Product Number :
IXTA130
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
130 A
Number of Terminals :
2
Pbfree Code :
yes
Qualification Status :
Not Qualified
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
330A
JESD-30 Code :
R-PSSO-G2
DS Breakdown Voltage-Min :
65V
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
yes
FET Type :
N-Channel
FET Feature :
--
Drain to Source Voltage (Vdss) :
65V
Product Type :
MOSFET
Published :
2008
Factory Lead Time :
24 Weeks
Gate Charge (Qg) (Max) @ Vgs :
79nC @ 10V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
6.6m Ω @ 50A, 10V
Transistor Polarity :
N-Channel
Pin Count :
4
Power Dissipation-Max (Abs) :
250 W
Power Dissipation (Max) :
250W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
SMD/SMT
Transistor Element Material :
SILICON
Number of Elements :
1
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
600 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchT2™
Transistor Application :
SWITCHING
Package :
Tube
Terminal Position :
Single
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Power Dissipation-Max :
250W Tc
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
TO-263 (IXTA)
Number of Terminations :
2
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.0066Ohm
Product Status :
Active
Datasheets
IXTA130N065T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N065T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IXTA130N065T2 pinout, IXTA130N065T2 datasheet PDF, IXTA130N065T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N065T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA130N065T2


N-Channel Tube 6.6m Ω @ 50A, 10V ±20V 4800pF @ 25V 79nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA130N065T2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 130A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 130 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 330A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 65V in order to maintain normal operation.Operating this transistor requires a 65V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA130N065T2 Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 330A.
a 65V drain to source voltage (Vdss)


IXTA130N065T2 Applications


There are a lot of IXYS
IXTA130N065T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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