IXTA120N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

Transistor Element Material :

SILICON

Supplier Device Package :

TO-263 (IXTA)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Package :

Tube

Power Dissipation-Max (Abs) :

200 W

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

16 ns

Drain to Source Breakdown Voltage :

40V

Qualification Status :

Not Qualified

Rise Time :

8ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Base Product Number :

IXTA120

Avalanche Energy Rating (Eas) :

400 mJ

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

360A

Channel Mode :

Enhancement

Product Status :

Active

DS Breakdown Voltage-Min :

40 V

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 175 C

Product Category :

MOSFET

JEDEC-95 Code :

TO-263AB

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Product Type :

MOSFET

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

ECCN Code :

EAR99

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Height :

4.83 mm

FET Feature :

--

Power Dissipation :

200W

Drain-source On Resistance-Max :

0.0061Ohm

Length :

10.41 mm

Width :

9.65 mm

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Power Dissipation-Max :

200W Tc

Drain Current-Max (Abs) (ID) :

120 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 25A, 10V

Number of Terminations :

2

Configuration :

Single

Mounting Style :

SMD/SMT

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

28 Weeks

Element Configuration :

Single

Fall Time (Typ) :

11 ns

Power Dissipation (Max) :

200W (Tc)

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Continuous Drain Current (ID) :

120A

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchT2™

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V