IXTA110N055T2

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Mfr.Part #
IXTA110N055T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO263
Stock
25,570
In Stock :
25,570

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
180W Tc
Rds On (Max) @ Id, Vgs :
6.6m Ω @ 25A, 10V
Turn-Off Delay Time :
40 ns
Series :
TrenchT2™
Mounting Style :
SMD/SMT
ECCN Code :
EAR99
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Published :
2004
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 175 C
Pbfree Code :
yes
Factory Lead Time :
28 Weeks
Pulsed Drain Current-Max (IDM) :
300A
Power Dissipation (Max) :
180W (Tc)
Fall Time (Typ) :
23 ns
RoHS :
Details
Length :
10.41 mm
Drain to Source Voltage (Vdss) :
55V
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Pin Count :
4
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tradename :
HiPerFET
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
3060pF @ 25V
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Number of Terminations :
2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Package :
Tube
Number of Elements :
1
Supplier Device Package :
TO-263 (IXTA)
Operating Temperature :
-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Vgs (Max) :
±20V
Subcategory :
MOSFETs
Packaging :
Tube
Transistor Type :
1 N-Channel
Height :
4.83 mm
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Rise Time :
25ns
Base Product Number :
IXTA110
Drain to Source Breakdown Voltage :
55V
Continuous Drain Current (ID) :
110A
Power Dissipation :
180W
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
Mounting Type :
Surface Mount
FET Feature :
--
Reach Compliance Code :
not_compliant
Configuration :
Single
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
400 mJ
Minimum Operating Temperature :
- 55 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
Width :
9.65 mm
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.0066Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Product Status :
Active
Datasheets
IXTA110N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA110N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, IXTA110N055T2 pinout, IXTA110N055T2 datasheet PDF, IXTA110N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA110N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA110N055T2


N-Channel Tube 6.6m Ω @ 25A, 10V ±20V 3060pF @ 25V 57nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA110N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA110N055T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


IXTA110N055T2 Applications


There are a lot of IXYS
IXTA110N055T2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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