IXTA10P15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Channel Mode :

Enhancement

RoHS Status :

RoHS Compliant

Product Status :

Active

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Mounting Style :

SMD/SMT

Series :

TrenchP™

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

150V

Surface Mount :

yes

Number of Channels :

1 Channel

Brand :

IXYS

Power Dissipation (Max) :

83W (Ta)

Terminal Position :

Single

Product Type :

MOSFET

Transistor Type :

1 P-Channel

Minimum Operating Temperature :

- 55 C

Terminal Form :

Gull wing

Transistor Polarity :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXTA10

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

30A

Package :

Tube

Avalanche Energy Rating (Eas) :

200 mJ

Rds On (Max) @ Id, Vgs :

350m Ω @ 5A, 10V

Vgs (Max) :

±15V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

2 (1 Year)

JESD-609 Code :

e3

Manufacturer :

IXYS

Power Dissipation-Max :

83W Ta

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Supplier Device Package :

TO-263 (D2Pak)

RoHS :

Details

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Rise Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

DS Breakdown Voltage-Min :

150V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

28 Weeks

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.35Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

10A

Published :

2012

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE