IXTA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

500 mJ

Number of Terminations :

2

Case Connection :

DRAIN

Manufacturer :

IXYS

Mounting Style :

SMD/SMT

Drain to Source Voltage (Vdss) :

600V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Drain Current-Max (Abs) (ID) :

10 A

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Published :

2006

DS Breakdown Voltage-Min :

600 V

Base Product Number :

IXTA10

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Product Status :

Active

Product Type :

MOSFET

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

30A

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Pbfree Code :

yes

Height :

4.83 mm

Power Dissipation (Max) :

200W (Tc)

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.74Ohm

Brand :

IXYS

Mount :

Surface Mount

Current Rating :

10A

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Rise Time :

27ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Width :

9.65 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Supplier Device Package :

TO-263 (IXTA)

Power Dissipation-Max :

200W Tc

FET Feature :

--

Surface Mount :

yes

Qualification Status :

Not Qualified

Package :

Tube

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Element Configuration :

Single

Series :

Polar™

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

200 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

2

JEDEC-95 Code :

TO-263AB

Continuous Drain Current (ID) :

10A

Configuration :

Single

Lead Free :

Lead Free

Length :

10.41 mm

Fall Time (Typ) :

21 ns

Power Dissipation :

200W

Channel Mode :

Enhancement

JESD-609 Code :

e3

Turn-Off Delay Time :

65 ns

Gate to Source Voltage (Vgs) :

30V