IXTA100N04T2

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Mfr.Part #
IXTA100N04T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263
Stock
26,077
In Stock :
26,077

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Number of Channels :
1 Channel
Published :
2008
Brand :
IXYS
Element Configuration :
Single
Transistor Application :
SWITCHING
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Tradename :
HiPerFET
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-PSSO-G2
Reach Compliance Code :
not_compliant
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 175 C
Number of Terminations :
2
Product Status :
Active
Drain-source On Resistance-Max :
0.007Ohm
Pulsed Drain Current-Max (IDM) :
300A
Minimum Operating Temperature :
- 55 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
150W Tc
Factory Lead Time :
28 Weeks
Product Type :
MOSFET
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
5.2ns
Series :
TrenchT2™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Height :
4.83 mm
Length :
10.41 mm
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
15.8 ns
Power Dissipation :
150W
Mount :
Surface Mount
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
40V
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
300 mJ
Supplier Device Package :
TO-263 (IXTA)
Mounting Type :
Surface Mount
Product Category :
MOSFET
Transistor Element Material :
SILICON
Package :
Tube
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
40V
Base Product Number :
IXTA100
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Width :
9.65 mm
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
FET Feature :
--
Manufacturer :
IXYS
Power Dissipation (Max) :
150W (Tc)
Fall Time (Typ) :
6.4 ns
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Continuous Drain Current (ID) :
100A
Pin Count :
4
Channel Mode :
Enhancement
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Datasheets
IXTA100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTA100N04T2 pinout, IXTA100N04T2 datasheet PDF, IXTA100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA100N04T2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.8 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTA100N04T2 Applications


There are a lot of IXYS
IXTA100N04T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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