IXGR50N60B

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

600V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max (Abs) :

250 W

Published :

2004

Terminal Position :

Single

Gate Charge :

110nC

Current - Collector (Ic) (Max) :

75A

Pin Count :

3

Switching Energy :

3mJ (off)

Polarity/Channel Type :

N-Channel

Package / Case :

ISOPLUS247™

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

5V

Collector Current-Max (IC) :

75 A

Packaging :

Tube

Reach Compliance Code :

Compliant

Base Part Number :

IXG*50N60

Configuration :

Single

Series :

HiPerFAST™

Number of Terminations :

3

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 50A

Base Product Number :

IXGR50

Power - Max :

250W

Product Status :

Obsolete

Test Condition :

480V, 50A, 2.7 Ω, 15V

Case Connection :

Isolated

Max Collector Current :

75A

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

ISOPLUS247™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Collector Emitter Voltage (VCEO) :

600V

JESD-609 Code :

e1

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

50ns/110ns

Mounting Type :

Through Hole

Collector-Emitter Voltage-Max :

600 V

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

375 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

200A

Number of Pins :

247

Turn On Time :

110 ns

Input Type :

Standard

Max Power Dissipation :

250W

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS Corporation

Number of Elements :

1

IGBT Type :

--

Number of Terminals :

3