IXFX90N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

360 A

Drain to Source Breakdown Voltage :

300V

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

55ns

DS Breakdown Voltage-Min :

300 V

RoHS :

Details

Mounting Style :

Through Hole

Power Dissipation :

560W

Drain Current-Max (Abs) (ID) :

90 A

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation (Max) :

560W (Tc)

Pin Count :

3

Base Product Number :

IXFX90

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1 Channel

Power Dissipation-Max :

560W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Current Rating :

90A

Fall Time (Typ) :

40 ns

Product Type :

MOSFET

Terminal Position :

Single

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Turn-Off Delay Time :

100 ns

Tradename :

HyperFET

JESD-30 Code :

R-PSIP-T3

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Width :

5.21 mm

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Mount :

Through Hole

Package :

Tube

Surface Mount :

No

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

300V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2002

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 8mA

Case Connection :

DRAIN

Continuous Drain Current (ID) :

90A

Product Category :

MOSFET

Element Configuration :

Single

Mounting Type :

Through Hole

Number of Terminations :

3

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Length :

16.13 mm

Resistance :

33mOhm

Drain-source On Resistance-Max :

0.033 Ω

Vgs (Max) :

±20V

Series :

HiPerFET™

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Height :

21.34 mm

Drain to Source Voltage (Vdss) :

300V

Supplier Device Package :

PLUS247™-3

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

560 W

Manufacturer :

IXYS

Radiation Hardening :

No

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Number of Terminals :

3