IXFX120N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

480A

Package :

Tube

Package / Case :

TO-247-3

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

175 ns

Brand :

IXYS

Height :

21.34 mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Series :

HiPerFET™

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Number of Terminals :

3

Number of Elements :

1

ECCN Code :

EAR99

Length :

16.13 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time (Typ) :

35 ns

Drain to Source Voltage (Vdss) :

250V

Width :

5.21 mm

Maximum Operating Temperature :

+ 150 C

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

560W Tc

Packaging :

Tube

Manufacturer :

IXYS

Element Configuration :

Single

Continuous Drain Current (ID) :

120A

Transistor Element Material :

SILICON

Surface Mount :

No

Supplier Device Package :

PLUS247™-3

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

560W (Tc)

Published :

2002

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.022Ohm

Pbfree Code :

yes

Number of Pins :

3

Terminal Position :

Single

Drain to Source Breakdown Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

120 A

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Product Status :

Active

FET Type :

N-Channel

Power Dissipation :

560W

Rise Time :

38ns

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

250 V

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Base Product Number :

IXFX120

Tradename :

HyperFET

Avalanche Energy Rating (Eas) :

3000 mJ

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

560 W

Vgs(th) (Max) @ Id :

4V @ 8mA

Pin Count :

3

Number of Terminations :

3

RoHS :

Details

JESD-30 Code :

R-PSIP-T3

FET Feature :

--

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ