IXFX140N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

250V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Pbfree Code :

yes

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

960 W

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Tube

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Width :

5.21 mm

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.017Ohm

RoHS :

Details

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

IXFX140

Package :

Tube

Transistor Type :

1 N-Channel

Published :

2009

Mounting Type :

Through Hole

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

JESD-609 Code :

e1

Brand :

IXYS

Mount :

Through Hole

Continuous Drain Current (ID) :

140A

Product Category :

MOSFET

Length :

16.13 mm

RoHS Status :

ROHS3 Compliant

Tradename :

HiPerFET

Supplier Device Package :

PLUS247™-3

Power Dissipation (Max) :

960W (Tc)

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Rise Time :

29 ns

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation-Max :

960W Tc

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Product Type :

MOSFET

Product Status :

Active

Number of Terminations :

3

Rds On Max :

17 mΩ

Series :

GigaMOS™

Transistor Application :

SWITCHING

FET Feature :

--

Input Capacitance :

19 nF

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Drain Current-Max (Abs) (ID) :

140 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

250V

Max Power Dissipation :

960 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

21.34 mm

Type :

GigaMOS Power MOSFET

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

380A

Operating Mode :

ENHANCEMENT MODE