IXFX140N30P
- Mfr.Part #
- IXFX140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A PLUS247-3
- Stock
- 16,731
- In Stock :
- 16,731
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.024Ohm
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Power Dissipation :
- 1.04kW
- Pin Count :
- 3
- Height :
- 21.34 mm
- Drain to Source Resistance :
- 24 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 300V
- Rise Time :
- 30ns
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Terminal Position :
- Single
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Channel Mode :
- Enhancement
- Power Dissipation-Max (Abs) :
- 1040 W
- Series :
- HiPerFET™, PolarP2™
- Max Operating Temperature :
- 150 °C
- Tradename :
- HiPerFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Type :
- Polar Power MOSFET HiPerFET
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Number of Pins :
- 3
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Package :
- Tube
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 1040W (Tc)
- Product Status :
- Active
- Pbfree Code :
- yes
- Published :
- 2008
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Drain to Source Breakdown Voltage :
- 300V
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 300 V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- PLUS247™-3
- Manufacturer :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5.21 mm
- Length :
- 16.13 mm
- Factory Lead Time :
- 30 Weeks
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- FET Feature :
- --
- JESD-609 Code :
- e1
- Input Capacitance :
- 14.8 nF
- Rds On Max :
- 24 mΩ
- Max Power Dissipation :
- 1.04 kW
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation-Max :
- 1040W Tc
- Min Operating Temperature :
- -55 °C
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 140 A
- Base Product Number :
- IXFX140
- Continuous Drain Current (ID) :
- 140A
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Datasheets
- IXFX140N30P
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N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-247-3
IXFX140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 24 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 24 mΩ
a 300V drain to source voltage (Vdss)
IXFX140N30P Applications
There are a lot of IXYS
IXFX140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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