IXFX120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

200V

RoHS :

Details

Base Product Number :

IXFX120

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation (Max) :

560W (Tc)

Power Dissipation :

560W

Configuration :

Single

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

200 V

Moisture Sensitivity Level (MSL) :

Not Applicable

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

35 ns

Rise Time :

65ns

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4V @ 8mA

Drain-source On Resistance-Max :

0.017 Ω

Tradename :

HyperFET

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

200V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Product Category :

MOSFET

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Packaging :

Tube

Mounting Style :

Through Hole

ECCN Code :

EAR99

Case Connection :

DRAIN

Continuous Drain Current (ID) :

120A

Power Dissipation-Max (Abs) :

560 W

Transistor Element Material :

SILICON

Resistance :

17mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

120A

Product Type :

MOSFET

Series :

HiPerFET™

Number of Terminals :

3

Number of Elements :

1

Brand :

IXYS

Lead Free :

Lead Free

Published :

2003

Transistor Type :

1 N-Channel

Height :

21.34 mm

Channel Mode :

Enhancement

Surface Mount :

No

Number of Terminations :

3

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

120 A

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Power Dissipation-Max :

560W Tc

Width :

5.21 mm

Number of Channels :

1 Channel

Radiation Hardening :

No

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

480A

Package :

Tube

Manufacturer :

IXYS

Turn-Off Delay Time :

110 ns

Length :

16.13 mm

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Package / Case :

TO-247-3

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Through Hole

Supplier Device Package :

PLUS247™-3

Product Status :

Not For New Designs

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED