IXFX120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Tradename :

HyperFET

Drain-source On Resistance-Max :

0.017 Ω

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

Not Applicable

Width :

5.21 mm

Fall Time (Typ) :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Power Dissipation :

560W

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Product Type :

MOSFET

Mounting Type :

Through Hole

Series :

HiPerFET™

Published :

2003

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

120 A

Qualification Status :

Not Qualified

Product Status :

Not For New Designs

Minimum Operating Temperature :

- 55 C

RoHS Status :

RoHS Compliant

Current Rating :

120A

Lead Free :

Lead Free

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

120A

Supplier Device Package :

PLUS247™-3

Case Connection :

DRAIN

Power Dissipation-Max :

560W Tc

Height :

21.34 mm

Pin Count :

3

Factory Lead Time :

8 Weeks

Package / Case :

TO-247-3

Pbfree Code :

yes

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Mount :

Through Hole

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

480A

Maximum Operating Temperature :

+ 150 C

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

560 W

RoHS :

Details

DS Breakdown Voltage-Min :

200 V

Transistor Type :

1 N-Channel

Brand :

IXYS

Drain to Source Breakdown Voltage :

200V

JESD-30 Code :

R-PSIP-T3

Channel Mode :

Enhancement

Manufacturer :

IXYS

Package :

Tube

Turn-Off Delay Time :

110 ns

Resistance :

17mOhm

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Package Shape :

RECTANGULAR

Surface Mount :

No

Base Product Number :

IXFX120

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Voltage - Rated DC :

200V

Product Category :

MOSFET

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rise Time :

65ns

Number of Terminals :

3

JESD-609 Code :

e1

Power Dissipation (Max) :

560W (Tc)

Length :

16.13 mm

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 8mA

Configuration :

Single