IXFX120N20
- Mfr.Part #
- IXFX120N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A PLUS247
- Stock
- 2,012
- In Stock :
- 2,012
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.017 Ω
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Width :
- 5.21 mm
- Fall Time (Typ) :
- 35 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Power Dissipation :
- 560W
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™
- Published :
- 2003
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 120 A
- Qualification Status :
- Not Qualified
- Product Status :
- Not For New Designs
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 120A
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 120A
- Supplier Device Package :
- PLUS247™-3
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 560W Tc
- Height :
- 21.34 mm
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 480A
- Maximum Operating Temperature :
- + 150 C
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max (Abs) :
- 560 W
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 200 V
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 200V
- JESD-30 Code :
- R-PSIP-T3
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Package :
- Tube
- Turn-Off Delay Time :
- 110 ns
- Resistance :
- 17mOhm
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Base Product Number :
- IXFX120
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 200V
- Voltage - Rated DC :
- 200V
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 60A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Rise Time :
- 65ns
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Power Dissipation (Max) :
- 560W (Tc)
- Length :
- 16.13 mm
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Configuration :
- Single
- Datasheets
- IXFX120N20
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N-Channel Tube 17m Ω @ 60A, 10V ±20V 9100pF @ 25V 300nC @ 10V 200V TO-247-3
IXFX120N20 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 9100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 120 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX120N20 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a 200V drain to source voltage (Vdss)
IXFX120N20 Applications
There are a lot of IXYS
IXFX120N20 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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