IXFX80N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Product Status :

Active

Power Dissipation :

1.3kW

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Pin Count :

3

Package Type :

PLUS247

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

87 ns

Power Dissipation (Max) :

1300W (Tc)

Series :

HiPerFET™, Polar3™

Package Shape :

RECTANGULAR

Brand :

IXYS

DS Breakdown Voltage-Min :

600 V

Rds On (Max) @ Id, Vgs :

70m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

2000 mJ

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

80 A

Turn On Delay Time :

48 ns

Continuous Drain Current (ID) :

80A

FET Feature :

--

RoHS :

Details

Surface Mount :

No

Length :

16.13mm

Published :

2011

Supplier Device Package :

PLUS247™-3

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Breakdown Voltage :

600V

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Packaging :

Tube

Case Connection :

DRAIN

Fall Time (Typ) :

8 ns

Vgs (Max) :

±30V

Width :

5.21mm

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Drain-source On Resistance-Max :

0.07Ohm

Product Type :

MOSFET

Channel Mode :

Enhancement

Power Dissipation-Max :

1300W Tc

Configuration :

Single

Mount :

Through Hole

Number of Terminals :

3

Base Product Number :

IXFX80

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

13100pF @ 25V

Maximum Operating Temperature :

+150 °C

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation-Max (Abs) :

1300 W

Height :

21.34mm

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Element Configuration :

Single

FET Type :

N-Channel

Manufacturer :

IXYS

Reach Compliance Code :

Unknown

Number of Pins :

247

Transistor Polarity :

N-Channel

Factory Lead Time :

30 Weeks

Minimum Operating Temperature :

-55 °C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Product Category :

MOSFET

Rise Time :

25ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Elements per Chip :

1

Number of Elements :

1