IXFX80N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Package :

Tube

Configuration :

Single

Manufacturer :

IXYS

FET Type :

N-Channel

Series :

HiPerFET™

Product Status :

Active

Length :

16.13mm

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Width :

5.21mm

Number of Channels :

1 Channel

Pin Count :

3

Transistor Application :

SWITCHING

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Lead Free :

Lead Free

Power Dissipation (Max) :

1250W (Tc)

Gate to Source Voltage (Vgs) :

30V

Product Category :

MOSFET

Turn On Delay Time :

30 ns

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Reach Compliance Code :

Unknown

Package / Case :

TO-247-3

Product Type :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Turn-Off Delay Time :

43 ns

Supplier Device Package :

PLUS247™-3

Continuous Drain Current (ID) :

80A

Power Dissipation :

1.25kW

Rds On (Max) @ Id, Vgs :

65m Ω @ 40A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rise Time :

250ns

Tradename :

HiPerFET

Base Product Number :

IXFX80

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Resistance :

65mOhm

Element Configuration :

Single

DS Breakdown Voltage-Min :

500 V

Avalanche Energy Rating (Eas) :

5000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Number of Pins :

247

Surface Mount :

No

Power Dissipation-Max :

1250W Tc

Height :

21.34mm

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Number of Elements :

1

Mount :

Through Hole

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

RoHS :

Details

Channel Mode :

Enhancement

Published :

2011

Drain-source On Resistance-Max :

0.065 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

240A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)