IXFX80N50P

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Mfr.Part #
IXFX80N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 80A PLUS247-3
Stock
22,060
In Stock :
22,060

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Height :
21.34 mm
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 8mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current Rating :
80A
DS Breakdown Voltage-Min :
500 V
Transistor Application :
SWITCHING
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Mount :
Through Hole
Length :
16.13 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
Not Qualified
Product Type :
MOSFET
FET Type :
N-Channel
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
500V
Configuration :
Single
Subcategory :
MOSFETs
Supplier Device Package :
PLUS247™-3
Continuous Drain Current (ID) :
80A
Series :
HiPerFET™, PolarHT™
Product Category :
MOSFET
Voltage - Rated DC :
500V
Rise Time :
27ns
Brand :
IXYS
Packaging :
Tube
Number of Channels :
1 Channel
Package :
Tube
Lead Free :
Lead Free
Published :
2006
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Power Dissipation :
1.04kW
Additional Feature :
AVALANCHE RATED
Mounting Style :
Through Hole
Product Status :
Active
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Power Dissipation (Max) :
1040W (Tc)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
200A
FET Feature :
--
Power Dissipation-Max :
1040W Tc
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
12700pF @ 25V
Terminal Position :
Single
Drain-source On Resistance-Max :
0.065 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Width :
5.21 mm
JESD-30 Code :
R-PSIP-T3
Package / Case :
TO-247-3
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Resistance :
65mOhm
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXFX80
Surface Mount :
No
Channel Mode :
Enhancement
Fall Time (Typ) :
16 ns
Current - Continuous Drain (Id) @ 25°C :
80A Tc
RoHS :
Details
Factory Lead Time :
30 Weeks
Turn-Off Delay Time :
70 ns
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
Avalanche Energy Rating (Eas) :
3500 mJ
Number of Terminals :
3
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
65m Ω @ 40A, 10V
Transistor Polarity :
N-Channel
Datasheets
IXFX80N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, IXFX80N50P pinout, IXFX80N50P datasheet PDF, IXFX80N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX80N50P


N-Channel Tube 65m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V TO-247-3

IXFX80N50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX80N50P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFX80N50P Applications


There are a lot of IXYS
IXFX80N50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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