IXFX80N50P
- Mfr.Part #
- IXFX80N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 80A PLUS247-3
- Stock
- 22,060
- In Stock :
- 22,060
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 21.34 mm
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 80A
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Mount :
- Through Hole
- Length :
- 16.13 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- Single
- Subcategory :
- MOSFETs
- Supplier Device Package :
- PLUS247™-3
- Continuous Drain Current (ID) :
- 80A
- Series :
- HiPerFET™, PolarHT™
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 500V
- Rise Time :
- 27ns
- Brand :
- IXYS
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Package :
- Tube
- Lead Free :
- Lead Free
- Published :
- 2006
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 1.04kW
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 1040W (Tc)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Feature :
- --
- Power Dissipation-Max :
- 1040W Tc
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 12700pF @ 25V
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.065 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Width :
- 5.21 mm
- JESD-30 Code :
- R-PSIP-T3
- Package / Case :
- TO-247-3
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Resistance :
- 65mOhm
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXFX80
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 16 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- RoHS :
- Details
- Factory Lead Time :
- 30 Weeks
- Turn-Off Delay Time :
- 70 ns
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 40A, 10V
- Transistor Polarity :
- N-Channel
- Datasheets
- IXFX80N50P
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N-Channel Tube 65m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V TO-247-3
IXFX80N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX80N50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFX80N50P Applications
There are a lot of IXYS
IXFX80N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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