IXFX74N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

74 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Min Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

PLUS247™-3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

3000 mJ

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Power Dissipation-Max :

1400W Tc

Number of Elements :

1

Published :

2011

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFX74

Package :

Tube

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

74A

Product Status :

Obsolete

Number of Pins :

247

Power Dissipation (Max) :

1400W (Tc)

Terminal Finish :

TIN SILVER COPPER

FET Feature :

--

Drain to Source Voltage (Vdss) :

500V

Max Operating Temperature :

150 °C

Rds On (Max) @ Id, Vgs :

77m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

FET Type :

N-Channel

Transistor Application :

SWITCHING

Manufacturer :

IXYS Corporation

Packaging :

Tube

Package / Case :

TO-247-3

Terminal Form :

THROUGH-HOLE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

77 mΩ

Drain to Source Resistance :

77 mΩ

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Power Dissipation-Max (Abs) :

1400 W

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Qualification Status :

Not Qualified

Number of Terminations :

3

Drain-source On Resistance-Max :

0.077Ohm

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 25V

Max Power Dissipation :

1.4 kW

Vgs(th) (Max) @ Id :

5V @ 4mA

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Pulsed Drain Current-Max (IDM) :

185A

RoHS :

Compliant

Case Connection :

DRAIN

Power Dissipation :

1.4kW

Series :

HiPerFET™, PolarHV™

DS Breakdown Voltage-Min :

500 V

Input Capacitance :

9.9 nF

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

Number of Terminals :

3