IXFX64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

85 ns

Rise Time :

25ns

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Series :

HiPerFET™, PolarHT™

Drain to Source Breakdown Voltage :

500V

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5.21 mm

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500 V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

150 A

Power Dissipation-Max :

830W Tc

Mount :

Through Hole

Supplier Device Package :

PLUS247™-3

Package Shape :

RECTANGULAR

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 150 C

Current Rating :

64A

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Drain Current-Max (Abs) (ID) :

64 A

Voltage - Rated DC :

500V

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

64A

Product Status :

Active

Manufacturer :

IXYS

Packaging :

Tube

Drain to Source Voltage (Vdss) :

500V

Transistor Type :

1 N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Tradename :

HiPerFET

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Factory Lead Time :

30 Weeks

Terminal Position :

Single

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max (Abs) :

830 W

Channel Mode :

Enhancement

RoHS :

Details

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Number of Terminals :

3

Product Category :

MOSFET

Resistance :

85mOhm

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Published :

2006

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mounting Style :

Through Hole

Power Dissipation (Max) :

830W (Tc)

Pin Count :

3

Drain-source On Resistance-Max :

0.085 Ω

Height :

21.34 mm

Number of Pins :

3

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Product Type :

MOSFET

FET Type :

N-Channel

Configuration :

Single

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

22 ns

Type :

PolarHV HiPerFET Power MOSFET

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

2500 mJ

Base Product Number :

IXFX64

Power Dissipation :

830W

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Length :

16.13 mm