IXFX64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation :

830W

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation-Max (Abs) :

830 W

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFX64

Package :

Tube

Height :

21.34 mm

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Number of Elements :

1

Transistor Type :

1 N-Channel

Product Status :

Active

Terminal Position :

Single

Mount :

Through Hole

Power Dissipation-Max :

830W Tc

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Length :

16.13 mm

JESD-609 Code :

e1

Channel Mode :

Enhancement

Brand :

IXYS

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Resistance :

85mOhm

Drain to Source Breakdown Voltage :

500V

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

150 A

Drain Current-Max (Abs) (ID) :

64 A

Manufacturer :

IXYS

Product Category :

MOSFET

Published :

2006

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC :

500V

Width :

5.21 mm

Supplier Device Package :

PLUS247™-3

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Packaging :

Tube

RoHS :

Details

Lead Free :

Lead Free

Type :

PolarHV HiPerFET Power MOSFET

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Continuous Drain Current (ID) :

64A

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Turn-Off Delay Time :

85 ns

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Terminations :

3

DS Breakdown Voltage-Min :

500 V

Radiation Hardening :

No

Rise Time :

25ns

Fall Time (Typ) :

22 ns

Drain-source On Resistance-Max :

0.085 Ω

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

830W (Tc)

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Current Rating :

64A

Tradename :

HiPerFET

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Series :

HiPerFET™, PolarHT™