IXFX55N50F

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Mfr.Part #
IXFX55N50F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 55A PLUS247-3
Stock
3,563
In Stock :
3,563

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Element Configuration :
Single
Drain-source On Resistance-Max :
0.0085Ohm
Number of Terminations :
3
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Base Product Number :
IXFX55
Avalanche Energy Rating (Eas) :
3000 mJ
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Pin Count :
3
Number of Terminals :
3
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
5.5V @ 8mA
FET Feature :
--
Package / Case :
TO-247-3
Power Dissipation-Max :
560W Tc
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
500V
Manufacturer :
IXYS Corporation
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
JESD-609 Code :
e1
Fall Time (Typ) :
9.6 ns
Operating Temperature :
-55°C~150°C TJ
Series :
HiPerRF™
Qualification Status :
Not Qualified
Rise Time :
20ns
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Product Status :
Obsolete
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
85m Ω @ 27.5A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
45 ns
Terminal Form :
THROUGH-HOLE
Published :
2009
Voltage - Rated DC :
500V
Factory Lead Time :
10 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
220A
Drain to Source Voltage (Vdss) :
500V
Vgs (Max) :
±20V
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
6700pF @ 25V
Number of Pins :
3
DS Breakdown Voltage-Min :
500 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSIP-T3
Power Dissipation :
560W
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Current Rating :
55A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
55A
Power Dissipation (Max) :
560W (Tc)
Supplier Device Package :
PLUS247™-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFX55N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX55N50F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFX55N50F pinout, IXFX55N50F datasheet PDF, IXFX55N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX55N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX55N50F


N-Channel Tube 85m Ω @ 27.5A, 10V ±20V 6700pF @ 25V 195nC @ 10V 500V TO-247-3

IXFX55N50F Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6700pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 220A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFX55N50F Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 220A.
a 500V drain to source voltage (Vdss)


IXFX55N50F Applications


There are a lot of IXYS
IXFX55N50F applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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