IXFX44N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1040W Tc

JESD-609 Code :

e1

Max Power Dissipation :

1.04 kW

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Pbfree Code :

yes

Series :

HiPerFET™, PolarHT™

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Through Hole

Height :

21.34 mm

Package :

Tube

Number of Elements :

1

Surface Mount :

No

Qualification Status :

Not Qualified

Length :

16.13 mm

Vgs (Max) :

±30V

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

1040W (Tc)

Product Category :

MOSFET

RoHS :

Details

Transistor Type :

1 N-Channel

Max Operating Temperature :

150 °C

Tradename :

HiPerFET

Reach Compliance Code :

Compliant

Input Capacitance :

12 nF

Transistor Element Material :

SILICON

Factory Lead Time :

30 Weeks

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Width :

5.21 mm

Number of Pins :

3

FET Type :

N-Channel

Supplier Device Package :

PLUS247™-3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Base Product Number :

IXFX44

FET Feature :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Active

Gate to Source Voltage (Vgs) :

30V

Transistor Polarity :

N-Channel

Drain to Source Resistance :

190 mΩ

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

190m Ω @ 22A, 10V

Type :

PolarHV HiPerFET Power MOSFET

Power Dissipation :

1.2kW

Min Operating Temperature :

-55 °C

Pin Count :

3

Rise Time :

22ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 8mA

DS Breakdown Voltage-Min :

800 V

Channel Mode :

Enhancement

Rds On Max :

190 mΩ

Fall Time (Typ) :

27 ns

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSIP-T3

Published :

2006

Number of Terminations :

3

Package / Case :

TO-247-3

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Terminal Position :

Single

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

100A

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.19Ohm

Drain to Source Voltage (Vdss) :

800V

Avalanche Energy Rating (Eas) :

3400 mJ

Continuous Drain Current (ID) :

44A

Brand :

IXYS

Turn-Off Delay Time :

75 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube