IXFX32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.32 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Transistor Polarity :

N-Channel

Height :

21.34 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

960W

Qualification Status :

Not Qualified

Pbfree Code :

yes

RoHS :

Details

Supplier Device Package :

PLUS247™-3

Number of Terminals :

3

Drain to Source Breakdown Voltage :

1kV

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Type :

Polar Power MOSFET HiPerFET

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

JESD-609 Code :

e1

Power Dissipation (Max) :

960W (Tc)

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

320m Ω @ 16A, 10V

Number of Channels :

1 Channel

Length :

16.13 mm

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

75A

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

1000V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

DS Breakdown Voltage-Min :

1000 V

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Vgs (Max) :

±30V

Number of Terminations :

3

Width :

5.21 mm

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

HiPerFET

Package / Case :

TO-247-3

Power Dissipation-Max (Abs) :

960 W

Configuration :

Single

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Continuous Drain Current (ID) :

32A

Rise Time :

55ns

Published :

2008

Series :

HiPerFET™, PolarP2™

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFX32

Turn-Off Delay Time :

76 ns

Surface Mount :

No

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Fall Time (Typ) :

43 ns

Drain Current-Max (Abs) (ID) :

32 A

Terminal Position :

Single

Power Dissipation-Max :

960W Tc

Product Type :

MOSFET

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tube

Product Category :

MOSFET