IXFX26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

DS Breakdown Voltage-Min :

1000 V

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Product Category :

MOSFET

Supplier Device Package :

PLUS247™-3

Turn-Off Delay Time :

72 ns

Package / Case :

TO-247-3

Rise Time :

45ns

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Resistance :

390 mΩ

Transistor Type :

1 N-Channel

Number of Terminals :

3

Element Configuration :

Single

Surface Mount :

No

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Additional Feature :

AVALANCHE RATED

Width :

5.21 mm

Drain to Source Voltage (Vdss) :

1000V

Package :

Tube

Min Operating Temperature :

-55 °C

JESD-609 Code :

e1

Continuous Drain Current (ID) :

26A

Power Dissipation :

780W

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Pin Count :

3

Power Dissipation (Max) :

780W (Tc)

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

780W Tc

Operating Temperature :

-55°C~150°C TJ

RoHS :

Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Mounting Style :

Through Hole

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Mount :

Through Hole

Height :

21.34 mm

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

Rds On Max :

390 mΩ

Product Status :

Active

Max Operating Temperature :

150 °C

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Fall Time (Typ) :

50 ns

Series :

HiPerFET™, PolarP2™

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

780 W

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

65A

Factory Lead Time :

30 Weeks

Packaging :

Tube

Number of Channels :

1 Channel

Input Capacitance :

11.9 nF

Configuration :

Single

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

26 A

Channel Mode :

Enhancement

Terminal Position :

Single

Max Power Dissipation :

780 W

Drain-source On Resistance-Max :

0.39 Ω

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Base Product Number :

IXFX26

Length :

16.13 mm

Brand :

IXYS

FET Type :

N-Channel

Manufacturer :

IXYS

Published :

2008