IXFX25N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Product Status :

Obsolete

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

330m Ω @ 500mA, 10V

Width :

5.21 mm

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

560W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Terminal Position :

Single

Turn-Off Delay Time :

130 ns

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Pulsed Drain Current-Max (IDM) :

100A

Rise Time :

35ns

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

3000 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Pins :

3

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Package :

Tube

Drain Current-Max (Abs) (ID) :

25 A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Surface Mount :

No

Drain-source On Resistance-Max :

0.33 Ω

Qualification Status :

Not Qualified

Base Product Number :

IXFX25

Input Capacitance :

10.8 nF

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

560 W

Supplier Device Package :

PLUS247™-3

Maximum Operating Temperature :

+ 150 C

Rds On Max :

330 mΩ

Mounting Style :

Through Hole

Case Connection :

DRAIN

Manufacturer :

IXYS

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

560W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Brand :

IXYS

Vgs (Max) :

±20V

Product Type :

MOSFET

Transistor Application :

SWITCHING

Tradename :

HyperFET

DS Breakdown Voltage-Min :

900 V

Max Operating Temperature :

150 °C

RoHS Status :

RoHS Compliant

Number of Elements :

1

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

900V

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Drain to Source Resistance :

330 mΩ

Max Power Dissipation :

560 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Mounting Type :

Through Hole

Fall Time (Typ) :

24 ns

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Height :

21.34 mm

Continuous Drain Current (ID) :

25A

JESD-609 Code :

e1

Series :

HiPerFET™

Number of Terminations :

3

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

900V

Transistor Polarity :

N-Channel

RoHS :

Compliant

Power Dissipation-Max :

560W Tc

Polarity/Channel Type :

N-Channel

Length :

16.13 mm

Package Shape :

RECTANGULAR

FET Feature :

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