IXFX24N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation-Max :

560W Tc

Supplier Device Package :

PLUS247™-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

1kV

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

560W

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Series :

HiPerRF™

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Fall Time (Typ) :

11 ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFX24

DS Breakdown Voltage-Min :

1000 V

Number of Terminations :

3

FET Feature :

--

Continuous Drain Current (ID) :

24A

FET Type :

N-Channel

Number of Elements :

1

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Manufacturer :

IXYS Corporation

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

52 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Product Status :

Obsolete

Qualification Status :

Not Qualified

Factory Lead Time :

10 Weeks

Mounting Type :

Through Hole

Package :

Tube

Power Dissipation (Max) :

560W (Tc)

Pin Count :

3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0039Ohm

Rise Time :

18ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

96A

Element Configuration :

Single