IXFX20N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-247-3

Threshold Voltage :

6.5V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Surface Mount :

No

Supplier Device Package :

PLUS247™-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

780W

Number of Elements :

1

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.57Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

1 N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain Current-Max (Abs) (ID) :

20 A

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Product Status :

Active

RoHS :

Details

Gate to Source Voltage (Vgs) :

30V

Power Dissipation (Max) :

780W (Tc)

Number of Terminations :

3

ECCN Code :

EAR99

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

1200V

Configuration :

Single

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

Channel Mode :

Enhancement

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Power Dissipation-Max (Abs) :

780 W

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Package :

Tube

Width :

5.21 mm

Published :

2008

Base Product Number :

IXFX20

Minimum Operating Temperature :

- 55 C

Number of Pins :

247

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.13 mm

Continuous Drain Current (ID) :

20A

Tradename :

HiPerFET

Rise Time :

45ns

Gate Charge (Qg) (Max) @ Vgs :

193nC @ 10V

Element Configuration :

Single

Power Dissipation-Max :

780W Tc

Qualification Status :

Not Qualified

Fall Time (Typ) :

70 ns

Factory Lead Time :

30 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Brand :

IXYS

DS Breakdown Voltage-Min :

1200 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Number of Channels :

1 Channel

Series :

HiPerFET™, PolarP2™

Drain to Source Breakdown Voltage :

1.2kV

Number of Terminals :

3

Case Connection :

DRAIN

Turn-Off Delay Time :

72 ns

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

1000 mJ

FET Feature :

--

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

50A

Maximum Operating Temperature :

+ 150 C

Height :

21.34 mm