IXFN60N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5V

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

36 ns

Package Type :

SOT-227

Power Dissipation-Max :

1040W Tc

Number of Channels :

1 Channel

Number of Terminals :

4

Configuration :

Single

Supplier Device Package :

SOT-227B

FET Feature :

--

JESD-30 Code :

R-PUFM-X4

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Rise Time :

29ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

140m Ω @ 30A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Product Category :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Product :

Power MOSFET Modules

Number of Terminations :

4

Minimum Operating Temperature :

-55 °C

Number of Elements per Chip :

1

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Series :

PolarHV™

Turn-Off Delay Time :

110 ns

ECCN Code :

EAR99

Length :

38.23mm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

4

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Type :

HiPerFET

DS Breakdown Voltage-Min :

800 V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Pin Count :

4

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

250A

Channel Type :

N

Published :

2003

Continuous Drain Current (ID) :

53A

Width :

25.42mm

Maximum Operating Temperature :

+150 °C

Mounting Style :

Screw Mounts

Avalanche Energy Rating (Eas) :

5000 mJ

Terminal Form :

UNSPECIFIED

Product Type :

Discrete Semiconductor Modules

Subcategory :

Discrete Semiconductor Modules

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

18000pF @ 25V

Height :

9.6mm

Number of Elements :

1

Case Connection :

Isolated

Package :

Tube

Power Dissipation (Max) :

1040W (Tc)

Fall Time (Typ) :

26 ns

Package / Case :

SOT-227-4, miniBLOC

Mount :

Chassis Mount, Panel, Screw

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.14 Ω

Power Dissipation :

1.04kW

Drain to Source Voltage (Vdss) :

800V

Drain to Source Breakdown Voltage :

800V

Factory Lead Time :

30 Weeks

Tradename :

HiPerFET

Polarity/Channel Type :

N-Channel

Terminal Finish :

Nickel (Ni)

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Pbfree Code :

yes

Base Product Number :

IXFN60