IXFN100N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

SOT-227B

Content :

1pc(s)

Mounting Style :

Screw Mounts

Width :

25.42 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Product Type :

Discrete Semiconductor Modules

Channels :

1

Published :

2003

Manuf. code :

IXY

Package :

Tube

Factory Lead Time :

30 Weeks

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Length :

38.23 mm

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXFN100

Reach Compliance Code :

Compliant

Max. operating temperature :

+150°C

Fall Time (Typ) :

26 ns

Surface Mount :

No

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

ECCN Code :

EAR99

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

30V

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Transistor Polarity :

N-Channel

Case Connection :

Isolated

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

90A

Threshold Voltage :

5V

Drain to Source Breakdown Voltage :

500V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product :

Power MOSFET Modules

Pulsed Drain Current-Max (IDM) :

250A

Package / Case :

SOT-227-4, miniBLOC

Channel Type :

N Channel

Enclosure :

SOT 227B

JESD-30 Code :

R-PUFM-X4

Terminal Finish :

Nickel (Ni)

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

1040W (Tc)

Avalanche Energy Rating (Eas) :

5000 mJ

Manufacturer :

IXYS

Number of Elements :

1

Drain-source On Resistance-Max :

0.049 Ω

Mount :

Chassis Mount, Screw

Number of Pins :

4

Power Dissipation :

1.04kW

MSL :

-

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Series :

PolarHV™

Tradename :

HiPerFET

Subcategory :

Discrete Semiconductor Modules

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Number of Terminals :

4

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Resistance :

49mOhm

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

FET Feature :

--

DS Breakdown Voltage-Min :

500 V

Continuous Drain Current Id :

100A

Type :

N-Channel

Qualification :

-

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

49m Ω @ 50A, 10V

Rise Time :

29ns

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Power (max) P(TOT) :

1040W

Turn-Off Delay Time :

110 ns

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Number of Terminations :

4

Terminal Position :

UPPER

Height :

9.6 mm

Qualification Status :

Not Qualified

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation-Max :

1040W Tc

Product Status :

Active

Product Category :

Discrete Semiconductor Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C