IXFN130N30

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Mfr.Part #
IXFN130N30
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 300V 130A SOT-227B
Stock
10,587
In Stock :
10,587

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
JESD-30 Code :
R-PUFM-X4
Drain to Source Breakdown Voltage :
300V
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
300V
Termination :
Screw
Number of Pins :
4
Transistor Application :
SWITCHING
Dual Supply Voltage :
300V
DS Breakdown Voltage-Min :
300 V
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Package Shape :
RECTANGULAR
Base Product Number :
IXFN130
Reverse Recovery Time :
250 ns
Vgs (Max) :
±20V
Series :
HiPerFET™
Continuous Drain Current (ID) :
130A
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
14500pF @ 25V
Supplier Device Package :
SOT-227B
Power Dissipation-Max :
700W Tc
Drain Current-Max (Abs) (ID) :
130 A
Surface Mount :
No
Turn-Off Delay Time :
130 ns
Rise Time :
75ns
Factory Lead Time :
8 Weeks
Voltage - Rated DC :
300V
Qualification Status :
Not Qualified
Package :
Tube
Mounting Type :
Chassis Mount
Power Dissipation (Max) :
700W (Tc)
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Terminal Finish :
Nickel (Ni)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
FET Feature :
--
FET Type :
N-Channel
Weight :
36mg
Number of Elements :
1
Number of Terminals :
4
Current Rating :
130A
Drain-source On Resistance-Max :
0.022 Ω
Drive Voltage (Max Rds On,Min Rds On) :
10V
Threshold Voltage :
4V
Nominal Vgs :
4 V
Pulsed Drain Current-Max (IDM) :
520A
RoHS Status :
RoHS Compliant
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
Published :
2003
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Mount :
Chassis Mount, Screw
Pin Count :
4
Package / Case :
SOT-227-4, miniBLOC
Terminal Position :
UPPER
Lead Free :
Lead Free
Manufacturer :
IXYS
REACH SVHC :
No SVHC
Power Dissipation-Max (Abs) :
700 W
Terminal Form :
UNSPECIFIED
Power Dissipation :
700W
Fall Time (Typ) :
31 ns
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
4000 mJ
Reach Compliance Code :
Compliant
Resistance :
22mOhm
Product Status :
Not For New Designs
Number of Terminations :
4
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFN130N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN130N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFN130N30 pinout, IXFN130N30 datasheet PDF, IXFN130N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN130N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN130N30


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 14500pF @ 25V 380nC @ 10V 300V SOT-227-4, miniBLOC

IXFN130N30 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14500pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 130 A.When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 520A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN130N30 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 520A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)


IXFN130N30 Applications


There are a lot of IXYS
IXFN130N30 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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