IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Manufacturer :

IXYS

Package / Case :

SOT-227-4, miniBLOC

Case Connection :

Isolated

Package Shape :

RECTANGULAR

Resistance :

17mOhm

Terminal Position :

UPPER

Base Product Number :

IXFN120

RoHS Status :

RoHS Compliant

Product :

Power MOSFET Modules

Transistor Element Material :

SILICON

Pbfree Code :

yes

Width :

25.42 mm

Threshold Voltage :

4V

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Nickel (Ni)

Product Status :

Not For New Designs

Terminal Form :

UNSPECIFIED

Power Dissipation :

600W

Number of Elements :

1

Drain-source On Resistance-Max :

0.017 Ω

Factory Lead Time :

8 Weeks

Product Category :

Discrete Semiconductor Modules

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Continuous Drain Current (ID) :

120A

Number of Terminations :

4

Polarity/Channel Type :

N-Channel

Type :

HiPerFET

Pin Count :

4

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 8mA

Mounting Type :

Chassis Mount

Drain Current-Max (Abs) (ID) :

120 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

40 ns

Package :

Tube

Tradename :

HyperFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Mounting Style :

Screw Mounts

Surface Mount :

No

Product Type :

Discrete Semiconductor Modules

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

55ns

Recovery Time :

250 ns

Packaging :

Tube

Avalanche Energy Rating (Eas) :

3000 mJ

Dual Supply Voltage :

200V

Current Rating :

120A

RoHS :

Details

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

38.23 mm

Mount :

Chassis Mount

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

480A

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

200V

Power Dissipation (Max) :

600W (Tc)

Supplier Device Package :

SOT-227B

Voltage - Rated DC :

200V

Moisture Sensitivity Level (MSL) :

Not Applicable

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Height :

9.6 mm

Published :

2003

JESD-30 Code :

R-PUFM-X4

Brand :

IXYS

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Number of Terminals :

4

FET Feature :

--

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

200 V

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

110 ns

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Series :

HiPerFET™

Power Dissipation-Max :

600W Tc

Power Dissipation-Max (Abs) :

600 W