IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

120 A

Product Category :

Discrete Semiconductor Modules

Product Type :

Discrete Semiconductor Modules

Brand :

IXYS

Product :

Power MOSFET Modules

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Application :

SWITCHING

Supplier Device Package :

SOT-227B

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Number of Terminals :

4

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation :

600W

Type :

HiPerFET

Number of Pins :

3

Avalanche Energy Rating (Eas) :

3000 mJ

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

600W (Tc)

Mounting Style :

Screw Mounts

Manufacturer :

IXYS

Turn-Off Delay Time :

110 ns

Pbfree Code :

yes

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

9.6 mm

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Terminal Position :

UPPER

Series :

HiPerFET™

Drain to Source Breakdown Voltage :

200V

Drain to Source Voltage (Vdss) :

200V

Resistance :

17mOhm

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Current Rating :

120A

Factory Lead Time :

8 Weeks

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFN120

Continuous Drain Current (ID) :

120A

Width :

25.42 mm

Case Connection :

Isolated

Surface Mount :

No

Packaging :

Tube

Published :

2003

Terminal Finish :

Nickel (Ni)

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

DS Breakdown Voltage-Min :

200 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 8mA

Vgs (Max) :

±20V

Length :

38.23 mm

Tradename :

HyperFET

Pin Count :

4

JESD-30 Code :

R-PUFM-X4

Package :

Tube

Package / Case :

SOT-227-4, miniBLOC

Lead Free :

Lead Free

Product Status :

Not For New Designs

Fall Time (Typ) :

40 ns

Rise Time :

55ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Dual Supply Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

250 ns

Mounting Type :

Chassis Mount

RoHS :

Details

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

200V

Threshold Voltage :

4V

Power Dissipation-Max :

600W Tc

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

600 W

Drain-source On Resistance-Max :

0.017 Ω