IXFN120N20

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Mfr.Part #
IXFN120N20
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 120A SOT-227B
Stock
1,287
In Stock :
1,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Drain Current-Max (Abs) (ID) :
120 A
Vgs (Max) :
±20V
Series :
HiPerFET™
Drain-source On Resistance-Max :
0.017 Ω
Pbfree Code :
yes
RoHS :
Details
Surface Mount :
No
Package / Case :
SOT-227-4, miniBLOC
Fall Time (Typ) :
40 ns
Drain to Source Voltage (Vdss) :
200V
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
600W
Terminal Finish :
Nickel (Ni)
Voltage - Rated DC :
200V
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Chassis Mount
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
120A
Pulsed Drain Current-Max (IDM) :
480A
Rise Time :
55ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Chassis Mount
FET Feature :
--
Nominal Vgs :
4 V
Length :
38.23 mm
ECCN Code :
EAR99
Type :
HiPerFET
Supplier Device Package :
SOT-227B
Avalanche Energy Rating (Eas) :
3000 mJ
REACH SVHC :
No SVHC
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Product Type :
Discrete Semiconductor Modules
Product Status :
Not For New Designs
Pin Count :
4
Turn-Off Delay Time :
110 ns
Number of Terminals :
4
Power Dissipation-Max :
600W Tc
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
UPPER
RoHS Status :
RoHS Compliant
Case Connection :
Isolated
Number of Terminations :
4
JESD-30 Code :
R-PUFM-X4
Number of Pins :
3
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
Not Applicable
Recovery Time :
250 ns
Tradename :
HyperFET
Factory Lead Time :
8 Weeks
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Resistance :
17mOhm
Current Rating :
120A
Number of Elements :
1
Published :
2003
Manufacturer :
IXYS
Power Dissipation-Max (Abs) :
600 W
Width :
25.42 mm
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
4V @ 8mA
Product :
Power MOSFET Modules
Rds On (Max) @ Id, Vgs :
17m Ω @ 500mA, 10V
Polarity/Channel Type :
N-Channel
Mounting Style :
Screw Mounts
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
600W (Tc)
Brand :
IXYS
Lead Free :
Lead Free
Base Product Number :
IXFN120
Threshold Voltage :
4V
Qualification Status :
Not Qualified
Dual Supply Voltage :
200V
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Drain to Source Breakdown Voltage :
200V
Terminal Form :
UNSPECIFIED
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
9.6 mm
Product Category :
Discrete Semiconductor Modules
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
200 V
Package :
Tube
Datasheets
IXFN120N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Type:HiPerFET, Number of Terminations:4, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFN120N20 pinout, IXFN120N20 datasheet PDF, IXFN120N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN120N20


N-Channel Tube 17m Ω @ 500mA, 10V ±20V 9100pF @ 25V 360nC @ 10V 200V SOT-227-4, miniBLOC

IXFN120N20 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 120 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN120N20 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXFN120N20 Applications


There are a lot of IXYS
IXFN120N20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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