IXFN120N20
- Mfr.Part #
- IXFN120N20
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A SOT-227B
- Stock
- 1,287
- In Stock :
- 1,287
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- HiPerFET
- Fall Time (Typ) :
- 40 ns
- Product :
- Power MOSFET Modules
- Power Dissipation-Max (Abs) :
- 600 W
- Pbfree Code :
- yes
- Number of Terminals :
- 4
- Width :
- 25.42 mm
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- UPPER
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- SOT-227-4, miniBLOC
- REACH SVHC :
- No SVHC
- RoHS :
- Details
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Surface Mount :
- No
- Current Rating :
- 120A
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminations :
- 4
- Power Dissipation :
- 600W
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 480A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Published :
- 2003
- Product Category :
- Discrete Semiconductor Modules
- Rise Time :
- 55ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Mounting Style :
- Screw Mounts
- Package Shape :
- RECTANGULAR
- Threshold Voltage :
- 4V
- Length :
- 38.23 mm
- Voltage - Rated DC :
- 200V
- Series :
- HiPerFET™
- Power Dissipation-Max :
- 600W Tc
- Terminal Finish :
- Nickel (Ni)
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.017 Ω
- RoHS Status :
- RoHS Compliant
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Continuous Drain Current (ID) :
- 120A
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 110 ns
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Nominal Vgs :
- 4 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 9.6 mm
- Dual Supply Voltage :
- 200V
- Drain Current-Max (Abs) (ID) :
- 120 A
- Vgs (Max) :
- ±20V
- Resistance :
- 17mOhm
- Power Dissipation (Max) :
- 600W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Chassis Mount
- DS Breakdown Voltage-Min :
- 200 V
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Not For New Designs
- Recovery Time :
- 250 ns
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Tradename :
- HyperFET
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFN120
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Product Type :
- Discrete Semiconductor Modules
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- SOT-227B
- Case Connection :
- Isolated
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- Mount :
- Chassis Mount
- Qualification Status :
- Not Qualified
- Terminal Form :
- UNSPECIFIED
- Lead Free :
- Lead Free
- Datasheets
- IXFN120N20

N-Channel Tube 17m Ω @ 500mA, 10V ±20V 9100pF @ 25V 360nC @ 10V 200V SOT-227-4, miniBLOC
IXFN120N20 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 120 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN120N20 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IXFN120N20 Applications
There are a lot of IXYS
IXFN120N20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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