IXFN120N20

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Mfr.Part #
IXFN120N20
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 120A SOT-227B
Stock
1,287
In Stock :
1,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
ECCN Code :
EAR99
Type :
HiPerFET
Tradename :
HyperFET
Pin Count :
4
RoHS :
Details
Mounting Style :
Screw Mounts
Supplier Device Package :
SOT-227B
Number of Pins :
3
Power Dissipation-Max :
600W Tc
Recovery Time :
250 ns
Published :
2003
Qualification Status :
Not Qualified
Drain Current-Max (Abs) (ID) :
120 A
Rise Time :
55ns
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
FET Type :
N-Channel
Lead Free :
Lead Free
Package :
Tube
Nominal Vgs :
4 V
Product Type :
Discrete Semiconductor Modules
Fall Time (Typ) :
40 ns
Current Rating :
120A
FET Feature :
--
Polarity/Channel Type :
N-Channel
Product Status :
Not For New Designs
Reach Compliance Code :
Compliant
Brand :
IXYS
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Power Dissipation :
600W
Power Dissipation-Max (Abs) :
600 W
Current - Continuous Drain (Id) @ 25°C :
120A Tc
RoHS Status :
RoHS Compliant
Number of Terminals :
4
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
17m Ω @ 500mA, 10V
Power Dissipation (Max) :
600W (Tc)
Terminal Position :
UPPER
Case Connection :
Isolated
Terminal Finish :
Nickel (Ni)
Moisture Sensitivity Level (MSL) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
200 V
Terminal Form :
UNSPECIFIED
Additional Feature :
AVALANCHE RATED
Width :
25.42 mm
Product Category :
Discrete Semiconductor Modules
Minimum Operating Temperature :
- 55 C
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PUFM-X4
Drain-source On Resistance-Max :
0.017 Ω
Continuous Drain Current (ID) :
120A
Height :
9.6 mm
Surface Mount :
No
Drain to Source Breakdown Voltage :
200V
Number of Terminations :
4
Mounting Type :
Chassis Mount
Threshold Voltage :
4V
Dual Supply Voltage :
200V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXFN120
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Avalanche Energy Rating (Eas) :
3000 mJ
Number of Elements :
1
Length :
38.23 mm
Package Shape :
RECTANGULAR
Voltage - Rated DC :
200V
Pulsed Drain Current-Max (IDM) :
480A
Transistor Polarity :
N-Channel
Product :
Power MOSFET Modules
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 8mA
Resistance :
17mOhm
Mount :
Chassis Mount
REACH SVHC :
No SVHC
Packaging :
Tube
Drain to Source Voltage (Vdss) :
200V
Factory Lead Time :
8 Weeks
Number of Channels :
1 Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
110 ns
Datasheets
IXFN120N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 from Chip IC,where excellence meets affordability. This product stands out with its Type:HiPerFET, Number of Pins:3, Number of Terminations:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFN120N20 pinout, IXFN120N20 datasheet PDF, IXFN120N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN120N20


N-Channel Tube 17m Ω @ 500mA, 10V ±20V 9100pF @ 25V 360nC @ 10V 200V SOT-227-4, miniBLOC

IXFN120N20 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 120 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN120N20 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXFN120N20 Applications


There are a lot of IXYS
IXFN120N20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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