IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Number of Terminals :

4

Turn-Off Delay Time :

110 ns

Lead Free :

Lead Free

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Nominal Vgs :

4 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

DS Breakdown Voltage-Min :

200 V

Length :

38.23 mm

Product Category :

Discrete Semiconductor Modules

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Pin Count :

4

Rise Time :

55ns

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Fall Time (Typ) :

40 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.017 Ω

Maximum Operating Temperature :

+ 150 C

Product Type :

Discrete Semiconductor Modules

Terminal Position :

UPPER

JESD-30 Code :

R-PUFM-X4

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

FET Feature :

--

Mount :

Chassis Mount

Number of Pins :

3

Tradename :

HyperFET

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

Product Status :

Not For New Designs

Pulsed Drain Current-Max (IDM) :

480A

Type :

HiPerFET

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Number of Terminations :

4

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Pbfree Code :

yes

Dual Supply Voltage :

200V

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

600W Tc

Height :

9.6 mm

Package / Case :

SOT-227-4, miniBLOC

Resistance :

17mOhm

Moisture Sensitivity Level (MSL) :

Not Applicable

Base Product Number :

IXFN120

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Form :

UNSPECIFIED

Width :

25.42 mm

Power Dissipation-Max (Abs) :

600 W

Mounting Type :

Chassis Mount

Series :

HiPerFET™

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 8mA

Package Shape :

RECTANGULAR

Power Dissipation :

600W

Reach Compliance Code :

Compliant

Mounting Style :

Screw Mounts

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

N-Channel

Package :

Tube

Continuous Drain Current (ID) :

120A

Drain Current-Max (Abs) (ID) :

120 A

Case Connection :

Isolated

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Product :

Power MOSFET Modules

Power Dissipation (Max) :

600W (Tc)

Current Rating :

120A

RoHS :

Details

Brand :

IXYS

Threshold Voltage :

4V

Terminal Finish :

Nickel (Ni)

Recovery Time :

250 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING