IXFN120N20

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Mfr.Part #
IXFN120N20
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 120A SOT-227B
Stock
1,287
In Stock :
1,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
HiPerFET
Fall Time (Typ) :
40 ns
Product :
Power MOSFET Modules
Power Dissipation-Max (Abs) :
600 W
Pbfree Code :
yes
Number of Terminals :
4
Width :
25.42 mm
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
UPPER
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Package / Case :
SOT-227-4, miniBLOC
REACH SVHC :
No SVHC
RoHS :
Details
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 8mA
Surface Mount :
No
Current Rating :
120A
Drain to Source Voltage (Vdss) :
200V
Number of Terminations :
4
Power Dissipation :
600W
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
480A
Avalanche Energy Rating (Eas) :
3000 mJ
Published :
2003
Product Category :
Discrete Semiconductor Modules
Rise Time :
55ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Tube
JESD-30 Code :
R-PUFM-X4
Mounting Style :
Screw Mounts
Package Shape :
RECTANGULAR
Threshold Voltage :
4V
Length :
38.23 mm
Voltage - Rated DC :
200V
Series :
HiPerFET™
Power Dissipation-Max :
600W Tc
Terminal Finish :
Nickel (Ni)
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.017 Ω
RoHS Status :
RoHS Compliant
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
200V
Moisture Sensitivity Level (MSL) :
Not Applicable
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Continuous Drain Current (ID) :
120A
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
110 ns
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Nominal Vgs :
4 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
9.6 mm
Dual Supply Voltage :
200V
Drain Current-Max (Abs) (ID) :
120 A
Vgs (Max) :
±20V
Resistance :
17mOhm
Power Dissipation (Max) :
600W (Tc)
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Mounting Type :
Chassis Mount
DS Breakdown Voltage-Min :
200 V
Gate to Source Voltage (Vgs) :
20V
Product Status :
Not For New Designs
Recovery Time :
250 ns
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Tradename :
HyperFET
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
17m Ω @ 500mA, 10V
Transistor Polarity :
N-Channel
Base Product Number :
IXFN120
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Product Type :
Discrete Semiconductor Modules
Reach Compliance Code :
Compliant
Supplier Device Package :
SOT-227B
Case Connection :
Isolated
Number of Channels :
1 Channel
Brand :
IXYS
Mount :
Chassis Mount
Qualification Status :
Not Qualified
Terminal Form :
UNSPECIFIED
Lead Free :
Lead Free
Datasheets
IXFN120N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 from Chip IC,where excellence meets affordability. This product stands out with its Type:HiPerFET, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Chassis Mount, Number of Channels:1 Channel, IXFN120N20 pinout, IXFN120N20 datasheet PDF, IXFN120N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN120N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN120N20


N-Channel Tube 17m Ω @ 500mA, 10V ±20V 9100pF @ 25V 360nC @ 10V 200V SOT-227-4, miniBLOC

IXFN120N20 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 120 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN120N20 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXFN120N20 Applications


There are a lot of IXYS
IXFN120N20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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