IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.017 Ω

Package :

Tube

Continuous Drain Current (ID) :

120A

Product Category :

Discrete Semiconductor Modules

RoHS :

Details

Product Status :

Not For New Designs

Supplier Device Package :

SOT-227B

Terminal Position :

UPPER

Pbfree Code :

yes

DS Breakdown Voltage-Min :

200 V

Turn-Off Delay Time :

110 ns

Rise Time :

55ns

Power Dissipation :

600W

Type :

HiPerFET

Tradename :

HyperFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 8mA

Series :

HiPerFET™

Number of Terminals :

4

Pin Count :

4

Number of Elements :

1

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

120 A

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Product :

Power MOSFET Modules

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Terminal Finish :

Nickel (Ni)

Height :

9.6 mm

Current Rating :

120A

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Screw Mounts

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Voltage - Rated DC :

200V

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

FET Feature :

--

Number of Channels :

1 Channel

Case Connection :

Isolated

Threshold Voltage :

4V

RoHS Status :

RoHS Compliant

Number of Pins :

3

Power Dissipation-Max :

600W Tc

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

480A

Resistance :

17mOhm

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Base Product Number :

IXFN120

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Terminal Form :

UNSPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

600W (Tc)

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Dual Supply Voltage :

200V

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation-Max (Abs) :

600 W

Recovery Time :

250 ns

Mounting Type :

Chassis Mount

Nominal Vgs :

4 V

JESD-30 Code :

R-PUFM-X4

Published :

2003

Manufacturer :

IXYS

Width :

25.42 mm

Drain to Source Breakdown Voltage :

200V

Length :

38.23 mm

Drain to Source Voltage (Vdss) :

200V

ECCN Code :

EAR99

Product Type :

Discrete Semiconductor Modules

Package / Case :

SOT-227-4, miniBLOC

Fall Time (Typ) :

40 ns

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

REACH SVHC :

No SVHC