IXFN100N10S2
- Mfr.Part #
- IXFN100N10S2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A SOT-227B
- Stock
- 19,037
- In Stock :
- 19,037
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Published :
- 2001
- Operating Temperature :
- -40°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- SOT-227B
- Drain to Source Voltage (Vdss) :
- 100V
- Pin Count :
- 4
- FET Feature :
- --
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Terminal Finish :
- Nickel (Ni)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 100A
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Number of Pins :
- 4
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFN100
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 360W (Tc)
- Mount :
- Chassis Mount
- Vgs (Max) :
- ±20V
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Element Material :
- SILICON
- Terminal Form :
- UNSPECIFIED
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 360W Tc
- JESD-30 Code :
- R-PUFM-X4
- Terminal Position :
- UPPER
- DS Breakdown Voltage-Min :
- 100V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Package :
- Tube
- Manufacturer :
- IXYS Corporation
- Product Status :
- Obsolete
- Number of Terminals :
- 4
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- Series :
- HiPerFET™
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 400 A
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Datasheets
- IXFN100N10S2

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V SOT-227-4, miniBLOC
IXFN100N10S2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400 A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFN100N10S2 Features
a continuous drain current (ID) of 100A
based on its rated peak drain current 400 A.
a 100V drain to source voltage (Vdss)
IXFN100N10S2 Applications
There are a lot of IXYS
IXFN100N10S2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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