IXFN100N10S3
- Mfr.Part #
- IXFN100N10S3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A SOT-227B
- Stock
- 36,063
- In Stock :
- 36,063
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- SOT-227B
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PUFM-X4
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Chassis Mount
- Terminal Finish :
- Nickel (Ni)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Base Product Number :
- IXFN100
- Power Dissipation-Max :
- 360W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Mount :
- Chassis Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100V
- Manufacturer :
- IXYS Corporation
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 400 A
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.0125Ohm
- DS Breakdown Voltage-Min :
- 100V
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Terminal Position :
- UPPER
- Published :
- 2001
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation (Max) :
- 360W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Pin Count :
- 4
- Series :
- HiPerFET™
- Number of Terminals :
- 4
- Case Connection :
- Isolated
- Surface Mount :
- No
- Operating Temperature :
- -40°C~150°C TJ
- Continuous Drain Current (ID) :
- 100A
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFN100N10S3

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V SOT-227-4, miniBLOC
IXFN100N10S3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400 A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN100N10S3 Features
a continuous drain current (ID) of 100A
based on its rated peak drain current 400 A.
a 100V drain to source voltage (Vdss)
IXFN100N10S3 Applications
There are a lot of IXYS
IXFN100N10S3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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