IXFN360N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55 °C

Input Capacitance :

47.5 nF

Current - Continuous Drain (Id) @ 25°C :

310A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Packaging :

Tube

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Brand :

IXYS

Channel Type :

N

Package :

Tube

Nominal Supply Current :

100A

Product Type :

Discrete Semiconductor Modules

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.004 Ω

Terminal Finish :

Nickel

Maximum Operating Temperature :

+175 °C

Minimum Operating Temperature :

-55 °C

Product :

Power MOSFET Modules

Length :

38.23mm

Drain to Source Resistance :

4 mΩ

Qualification Status :

Not Qualified

Fall Time (Typ) :

265 ns

Power Dissipation (Max) :

1070W (Tc)

Mounting Style :

Screw Mounts

FET Type :

N-Channel

Lead Free :

Lead Free

Number of Terminations :

4

Rise Time :

170ns

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

47500pF @ 25V

Output Current :

310A

Transistor Element Material :

SILICON

Turn-Off Delay Time :

115 ns

Series :

GigaMOS™

Resistance :

4mOhm

Turn-On Delay Time :

50 ns

Supplier Device Package :

SOT-227B

Number of Elements per Chip :

1

Max Power Dissipation :

1.07 kW

Operating Temperature :

-55°C~175°C TJ

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

150V

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Factory Lead Time :

30 Weeks

Turn On Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

4m Ω @ 60A, 10V

Pbfree Code :

yes

Package Type :

SOT-227

Gate Charge (Qg) (Max) @ Vgs :

715nC @ 10V

RoHS :

Details

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

4

Case Connection :

Isolated

Continuous Drain Current (ID) :

310A

DS Breakdown Voltage-Min :

150 V

Rds On Max :

4 mΩ

Published :

2009

Power Dissipation-Max :

1070W Tc

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

900A

ECCN Code :

EAR99

Output Voltage :

150V

Number of Outputs :

1

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

310 A

JESD-30 Code :

R-PUFM-X4

FET Feature :

--

Power Dissipation-Max (Abs) :

1070 W

Terminal Position :

UPPER

Width :

25.07mm

Package / Case :

SOT-227-4, miniBLOC

Terminal Form :

UNSPECIFIED

Max Operating Temperature :

175 °C

Product Status :

Active

Mount :

Chassis Mount

Height :

9.6mm

Surface Mount :

No

Pin Count :

4

Base Product Number :

IXFN360

Type :

GigaMOS Trench T2 HiperFet

Polarity/Channel Type :

N-Channel