IXFN280N085

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Mfr.Part #
IXFN280N085
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 85V 280A SOT-227B
Stock
4,904
In Stock :
4,904

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
Isolated
Pbfree Code :
yes
Power Dissipation-Max :
700W Tc
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
4
Transistor Application :
SWITCHING
Number of Pins :
4
Mount :
Chassis Mount, Screw
Turn-Off Delay Time :
200 ns
Lead Free :
Lead Free
Number of Terminations :
4
Package / Case :
SOT-227-4, miniBLOC
Avalanche Energy Rating (Eas) :
4000 mJ
Gate Charge (Qg) (Max) @ Vgs :
580nC @ 10V
Pulsed Drain Current-Max (IDM) :
1120 A
Supplier Device Package :
SOT-227B
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Mounting Type :
Chassis Mount
Vgs(th) (Max) @ Id :
4V @ 8mA
Package :
Tube
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Pin Count :
4
Terminal Finish :
Nickel (Ni)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
700W
Number of Channels :
1 Channel
Drain Current-Max (Abs) (ID) :
280 A
Product Type :
Discrete Semiconductor Modules
Number of Elements :
1
Fall Time (Typ) :
33 ns
Base Product Number :
IXFN280
ECCN Code :
EAR99
Terminal Position :
UPPER
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max (Abs) :
700 W
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
85V
RoHS :
Details
Product :
Power MOSFET Modules
Width :
25.42 mm
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.0044 Ω
Continuous Drain Current (ID) :
280A
Maximum Operating Temperature :
+ 150 C
Radiation Hardening :
No
Factory Lead Time :
8 Weeks
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Published :
2008
Length :
38.23 mm
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 100A, 10V
Drain to Source Breakdown Voltage :
85V
Series :
HiPerFET™
Height :
9.6 mm
Manufacturer :
IXYS
Power Dissipation (Max) :
700W (Tc)
Mounting Style :
Chassis Mount
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PUFM-X4
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
Discrete Semiconductor Modules
Resistance :
390mOhm
Current - Continuous Drain (Id) @ 25°C :
280A Tc
Tradename :
HyperFET
Terminal Form :
UNSPECIFIED
Rise Time :
95ns
Product Status :
Not For New Designs
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Reach Compliance Code :
Compliant
RoHS Status :
RoHS Compliant
DS Breakdown Voltage-Min :
85 V
Datasheets
IXFN280N085
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Channels:1 Channel, IXFN280N085 pinout, IXFN280N085 datasheet PDF, IXFN280N085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN280N085


N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC

IXFN280N085 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN280N085 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)


IXFN280N085 Applications


There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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