IXFN280N085
- Mfr.Part #
- IXFN280N085
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 280A SOT-227B
- Stock
- 4,904
- In Stock :
- 4,904
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 700W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 4
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Mount :
- Chassis Mount, Screw
- Turn-Off Delay Time :
- 200 ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 580nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 1120 A
- Supplier Device Package :
- SOT-227B
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Chassis Mount
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Pin Count :
- 4
- Terminal Finish :
- Nickel (Ni)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 700W
- Number of Channels :
- 1 Channel
- Drain Current-Max (Abs) (ID) :
- 280 A
- Product Type :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Fall Time (Typ) :
- 33 ns
- Base Product Number :
- IXFN280
- ECCN Code :
- EAR99
- Terminal Position :
- UPPER
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 700 W
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 85V
- RoHS :
- Details
- Product :
- Power MOSFET Modules
- Width :
- 25.42 mm
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0044 Ω
- Continuous Drain Current (ID) :
- 280A
- Maximum Operating Temperature :
- + 150 C
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Published :
- 2008
- Length :
- 38.23 mm
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 100A, 10V
- Drain to Source Breakdown Voltage :
- 85V
- Series :
- HiPerFET™
- Height :
- 9.6 mm
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 700W (Tc)
- Mounting Style :
- Chassis Mount
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PUFM-X4
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- Discrete Semiconductor Modules
- Resistance :
- 390mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 280A Tc
- Tradename :
- HyperFET
- Terminal Form :
- UNSPECIFIED
- Rise Time :
- 95ns
- Product Status :
- Not For New Designs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Reach Compliance Code :
- Compliant
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 85 V
- Datasheets
- IXFN280N085

N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC
IXFN280N085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN280N085 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)
IXFN280N085 Applications
There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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