IXFN280N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

25.07 mm

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

DS Breakdown Voltage-Min :

70 V

Case Connection :

Isolated

Mount :

Chassis Mount

Terminal Position :

UPPER

JESD-30 Code :

R-PUFM-X4

Continuous Drain Current (ID) :

280A

FET Feature :

--

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Details

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

600W (Tc)

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Finish :

Nickel (Ni)

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Package :

Tube

Base Product Number :

IXFN280

Product Type :

Discrete Semiconductor Modules

Package / Case :

SOT-227-4, miniBLOC

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HyperFET

Rds On (Max) @ Id, Vgs :

5m Ω @ 120A, 10V

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

85 ns

Height :

9.6 mm

Published :

2007

Number of Channels :

1 Channel

Mounting Style :

Chassis Mount

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

280A Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminals :

4

Drain to Source Breakdown Voltage :

70V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

1120A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Brand :

IXYS

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

280 A

Drain-source On Resistance-Max :

0.005ohm

Pin Count :

4

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

600W Tc

ECCN Code :

EAR99

Fall Time (Typ) :

50 ns

Packaging :

Tube

Power Dissipation :

600W

Number of Pins :

4

Product Status :

Not For New Designs

Product Category :

Discrete Semiconductor Modules

Series :

HiPerFET™

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Length :

38.2 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

70V

Product :

Power MOSFET Modules

RoHS Status :

RoHS Compliant

Rise Time :

90ns

Power Dissipation-Max (Abs) :

600 W

Supplier Device Package :

SOT-227B