IXFN27N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PUFM-X4

Rise Time :

28ns

Turn-Off Delay Time :

50 ns

Packaging :

Tube

MSL :

-

Terminal Position :

UPPER

Continuous Drain Current (ID) :

27A

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

800V

Pbfree Code :

yes

Continuous Drain Current Id :

27A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Product Category :

Discrete Semiconductor Modules

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Number of Channels :

1 Channel

REACH SVHC :

No SVHC

Surface Mount :

No

Isolation Voltage :

2.5kV

Mounting Style :

Chassis Mount

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Base Product Number :

IXFN27

Width :

25.07 mm

Fall Time (Typ) :

13 ns

Product Status :

Active

Series :

HiPerFET™

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Threshold Voltage :

4.5V

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

Height :

9.6 mm

Number of Terminals :

4

Qualification :

-

Termination :

Screw

Number of Pins :

4

Nominal Vgs :

4.5 V

Resistance :

320mOhm

Power Dissipation-Max :

520W Tc

Pulsed Drain Current-Max (IDM) :

108A

RoHS :

Details

Package :

Tube

Weight :

40g

Package Shape :

RECTANGULAR

Pin Count :

4

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Channel Type :

N Channel

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

2500 mJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.32 Ω

Power Dissipation (Max) :

520W (Tc)

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

38.2 mm

Product Type :

Discrete Semiconductor Modules

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Power Dissipation :

520W

Terminal Form :

UNSPECIFIED

Dual Supply Voltage :

800V

FET Type :

N-Channel

Product :

Power MOSFET Modules

ECCN Code :

EAR99

Mount :

Chassis Mount

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800 V

Number of Terminations :

4

Supplier Device Package :

SOT-227B

Published :

2001

Minimum Operating Temperature :

- 55 C

Package / Case :

SOT-227-4, miniBLOC

Polarity/Channel Type :

N-Channel

Subcategory :

Discrete Semiconductor Modules

Configuration :

SINGLE WITH BUILT-IN DIODE