IXFN210N20P

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Mfr.Part #
IXFN210N20P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 188A SOT-227B
Stock
7,334
In Stock :
7,334

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Power Dissipation-Max (Abs) :
1070 W
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Type :
HiPerFET
Number of Terminations :
4
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
188A
Product :
Power MOSFET Modules
Series :
HiPerFET™
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Reach Compliance Code :
Compliant
Factory Lead Time :
30 Weeks
Brand :
IXYS
Avalanche Energy Rating (Eas) :
4000 mJ
Drain to Source Breakdown Voltage :
200V
Power Dissipation-Max :
1070W Tc
Terminal Form :
UNSPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Drain to Source Voltage (Vdss) :
200V
Power Dissipation :
1.07kW
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Transistor Element Material :
SILICON
RoHS :
Details
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Drain Current-Max (Abs) (ID) :
188 A
Tradename :
HiPerFET
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
200 V
Base Product Number :
IXFN210
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
Power Dissipation (Max) :
1070W (Tc)
Pulsed Drain Current-Max (IDM) :
600A
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 105A, 10V
Number of Pins :
4
Configuration :
Single
Lead Free :
Lead Free
Product Status :
Active
Mounting Type :
Chassis Mount
Mount :
Chassis Mount, Screw
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Resistance :
10.5mOhm
Packaging :
Tube
Case Connection :
Isolated
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Mounting Style :
Screw Mounts
Supplier Device Package :
SOT-227B
Number of Terminals :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
SOT-227-4, miniBLOC
Product Type :
Discrete Semiconductor Modules
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Pin Count :
4
Maximum Operating Temperature :
+ 175 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
188A Tc
Published :
2010
Terminal Finish :
Nickel (Ni)
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PUFM-X4
Product Category :
Discrete Semiconductor Modules
Number of Elements :
1
Terminal Position :
UPPER
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.0105 Ω
Datasheets
IXFN210N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN210N20P from Chip IC,where excellence meets affordability. This product stands out with its Type:HiPerFET, Number of Terminations:4, Number of Pins:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~175°C TJ, IXFN210N20P pinout, IXFN210N20P datasheet PDF, IXFN210N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN210N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN210N20P


N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V SOT-227-4, miniBLOC

IXFN210N20P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 188A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.188 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 600A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFN210N20P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 188A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)


IXFN210N20P Applications


There are a lot of IXYS
IXFN210N20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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