IXFN150N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Current Rating :

150A

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

520W Tc

Drain Current-Max (Abs) (ID) :

150 A

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Surface Mount :

No

Product Status :

Not For New Designs

Number of Terminations :

4

Product Type :

Discrete Semiconductor Modules

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

100 V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 8mA

Number of Elements :

1

Brand :

IXYS

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

560A

Transistor Application :

SWITCHING

Power Dissipation :

520W

Power Dissipation (Max) :

520W (Tc)

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

520 W

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Package :

Bulk

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Number of Channels :

1 Channel

Series :

HiPerFET™

Mounting Type :

Chassis Mount

Fall Time (Typ) :

60 ns

Power Dissipation Ambient-Max :

520 W

Height :

9.6 mm

Package / Case :

SOT-227-4, miniBLOC

Number of Terminals :

4

Length :

38.23 mm

Factory Lead Time :

30 Weeks

Terminal Finish :

Nickel (Ni)

Drain-source On Resistance-Max :

0.012 Ω

Packaging :

Bulk

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

FET Feature :

--

Terminal Position :

UPPER

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

Rise Time :

60ns

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

150A

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFN150

Drain to Source Voltage (Vdss) :

100V

Supplier Device Package :

SOT-227B

Mount :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

100 ns

Product Category :

Discrete Semiconductor Modules

FET Type :

N-Channel

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Mounting Style :

Chassis Mount

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

25.42 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

12mOhm

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PUFM-X4