IXBX75N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Maximum Operating Temperature :

+ 150 C

Max Power Dissipation :

1.04kW

Technology :

Si

Gate-Emitter Thr Voltage-Max :

5.5V

Collector Emitter Breakdown Voltage :

1.7kV

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time (trr) :

1.5μs

Min Operating Temperature :

-55 °C

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Width :

5.21 mm

Input Type :

Standard

Polarity/Channel Type :

N-Channel

Number of Elements :

1

JESD-609 Code :

e1

Voltage - Collector Emitter Breakdown (Max) :

1700V

Product Status :

Active

Turn Off Time-Nom (toff) :

840 ns

Radiation Hardening :

No

Pbfree Code :

yes

Surface Mount :

No

Max Collector Current :

200A

Brand :

IXYS

Power - Max :

1040W

Current - Collector (Ic) (Max) :

200A

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Product Category :

IGBT Transistors

Element Configuration :

Single

Power Dissipation-Max (Abs) :

1040 W

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~150°C TJ

Product Type :

IGBT Transistors

Number of Pins :

3

Package / Case :

TO-247-3

Base Part Number :

IXB*75N170

Collector Emitter Voltage (VCEO) :

1.7kV

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Mounting Style :

Through Hole

Packaging :

Tube

Pin Count :

3

Published :

2009

Turn On Time :

277 ns

Case Connection :

COLLECTOR

Configuration :

Single

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Compliant

Terminal Finish :

TIN SILVER COPPER

Test Condition :

--

Supplier Device Package :

PLUS247™-3

Height :

21.34 mm

Transistor Element Material :

SILICON

Base Product Number :

IXBX75

Max Operating Temperature :

150 °C

Manufacturer :

IXYS

JESD-30 Code :

R-PSIP-T3

Td (on/off) @ 25°C :

--

Tradename :

BIMOSFET

Reach Compliance Code :

Compliant

Reverse Recovery Time :

1.5 μs

Length :

16.13 mm

Switching Energy :

--

Factory Lead Time :

28 Weeks

IGBT Type :

--

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 75A

Current - Collector Pulsed (Icm) :

580A

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Package :

Tube

Series :

BIMOSFET™

Collector-Emitter Voltage-Max :

1700 V

Collector Current-Max (IC) :

200 A

Mount :

Through Hole

Gate Charge :

350nC