IXBX75N170
- Mfr.Part #
- IXBX75N170
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1700V 200A 1040W PLUS247
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Voltage-Max :
- 20V
- Height :
- 21.34 mm
- Reverse Recovery Time :
- 1.5 μs
- Gate Charge :
- 350nC
- Terminal Finish :
- TIN SILVER COPPER
- Base Product Number :
- IXBX75
- Transistor Element Material :
- SILICON
- Reverse Recovery Time (trr) :
- 1.5μs
- Turn On Time :
- 277 ns
- Length :
- 16.13 mm
- Manufacturer :
- IXYS
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSIP-T3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Application :
- POWER CONTROL
- Case Connection :
- COLLECTOR
- IGBT Type :
- --
- Radiation Hardening :
- No
- Supplier Device Package :
- PLUS247™-3
- Turn Off Time-Nom (toff) :
- 840 ns
- Pbfree Code :
- yes
- Width :
- 5.21 mm
- Qualification Status :
- Not Qualified
- Max Operating Temperature :
- 150 °C
- Configuration :
- Single
- Surface Mount :
- No
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 75A
- Pin Count :
- 3
- Technology :
- Si
- Current - Collector Pulsed (Icm) :
- 580A
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 1.7kV
- Max Power Dissipation :
- 1.04kW
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- IGBT Transistors
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Min Operating Temperature :
- -55 °C
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-247-3
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Max Collector Current :
- 200A
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Test Condition :
- --
- Tradename :
- BIMOSFET
- Base Part Number :
- IXB*75N170
- Product Category :
- IGBT Transistors
- Td (on/off) @ 25°C :
- --
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 1040 W
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- RoHS :
- Compliant
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 200A
- Collector-Emitter Voltage-Max :
- 1700 V
- Factory Lead Time :
- 28 Weeks
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Input Type :
- Standard
- Collector Current-Max (IC) :
- 200 A
- Series :
- BIMOSFET™
- Power - Max :
- 1040W
- Switching Energy :
- --
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Package :
- Tube
- Datasheets
- IXBX75N170
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IXBX75N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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