IXBK75N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Test Condition :

--

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

200A

Power - Max :

1040W

Min Operating Temperature :

-55 °C

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXBK75

Turn Off Time-Nom (toff) :

840 ns

Height :

26.16 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate-Emitter Voltage-Max :

20V

Element Configuration :

Single

Width :

5.13 mm

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e1

Max Operating Temperature :

150 °C

Pbfree Code :

yes

Reverse Recovery Time (trr) :

1.5μs

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Gate Charge :

350nC

Mount :

Through Hole

Case Connection :

COLLECTOR

Reverse Recovery Time :

1.5 μs

RoHS :

Compliant

Input Type :

Standard

Product Status :

Active

Base Part Number :

IXB*75N170

Packaging :

Tube

Tradename :

BIMOSFET

Switching Energy :

--

Published :

2003

Current - Collector (Ic) (Max) :

200A

Manufacturer :

IXYS

Turn On Time :

277 ns

Td (on/off) @ 25°C :

--

Max Power Dissipation :

1.04kW

Product Type :

IGBT Transistors

Length :

19.96 mm

Number of Elements :

1

Current - Collector Pulsed (Icm) :

580A

Product Category :

IGBT Transistors

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 75A

Collector Emitter Voltage (VCEO) :

3.1V

Supplier Device Package :

TO-264

Package / Case :

TO-264-3, TO-264AA

Gate-Emitter Thr Voltage-Max :

5.5V

Mounting Style :

Through Hole

Collector Emitter Breakdown Voltage :

1.7kV

Series :

BIMOSFET™

IGBT Type :

--

Factory Lead Time :

28 Weeks

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Technology :

Si

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Reach Compliance Code :

Unknown

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration :

Single

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

1700V