IXBK75N170
- Mfr.Part #
- IXBK75N170
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 1700V 200A 1040W TO264
- Stock
- 487
- In Stock :
- 487
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- * Fullname:
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Through Hole
- Product Category :
- IGBT Transistors
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Compliant
- Height :
- 26.16 mm
- Input Type :
- Standard
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Tradename :
- BIMOSFET
- IGBT Type :
- --
- Reverse Recovery Time (trr) :
- 1.5μs
- Configuration :
- Single
- Transistor Application :
- POWER CONTROL
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-264
- Technology :
- Si
- Min Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- Base Part Number :
- IXB*75N170
- Product Type :
- IGBT Transistors
- Number of Terminations :
- 3
- Pin Count :
- 3
- Current - Collector Pulsed (Icm) :
- 580A
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 75A
- Max Power Dissipation :
- 1.04kW
- Td (on/off) @ 25°C :
- --
- JESD-30 Code :
- R-PSFM-T3
- Length :
- 19.96 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- --
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Gate Charge :
- 350nC
- Power - Max :
- 1040W
- Mounting Style :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Published :
- 2003
- JESD-609 Code :
- e1
- Product Status :
- Active
- Turn Off Time-Nom (toff) :
- 840 ns
- Transistor Element Material :
- SILICON
- Reverse Recovery Time :
- 1.5 μs
- Collector Emitter Voltage (VCEO) :
- 3.1V
- Manufacturer :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- Gate-Emitter Voltage-Max :
- 20V
- Mount :
- Through Hole
- Series :
- BIMOSFET™
- Turn On Time :
- 277 ns
- Current - Collector (Ic) (Max) :
- 200A
- Package :
- Tube
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Width :
- 5.13 mm
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 28 Weeks
- Minimum Operating Temperature :
- - 55 C
- Max Collector Current :
- 200A
- Max Operating Temperature :
- 150 °C
- Base Product Number :
- IXBK75
- Test Condition :
- --
- Reach Compliance Code :
- Unknown
- Brand :
- IXYS
- Datasheets
- IXBK75N170

IXBK75N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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