ITC1100

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pin Count :

3

Number of Elements :

1

Terminal Form :

Flat

ECCN Code :

EAR99

Power - Max :

3400W

Packaging :

Bulk

Max Collector Current :

80A

Transistor Type :

NPN

Power Dissipation :

3.4kW

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Emitter Base Voltage (VEBO) :

3.5V

Factory Lead Time :

22 Weeks

RoHS Status :

RoHS Compliant

Number of Pins :

3

JESD-609 Code :

e0

Highest Frequency Band :

L B

Mounting Type :

Chassis Mount

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

65V

Collector Emitter Voltage (VCEO) :

30V

Frequency - Transition :

1.03GHz

Published :

2000

Package / Case :

55SW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 5A 5V

Gain :

10dB ~ 10.5dB

Number of Terminations :

3

Collector Base Voltage (VCBO) :

65V

Operating Temperature :

200°C TJ

Max Power Dissipation :

3.4kW

Mount :

Chassis Mount, Screw

Polarity/Channel Type :

NPN

Radiation Hardening :

No