IRLU9343PBF
- Mfr.Part #
- IRLU9343PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 20A IPAK
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time :
- 11 Weeks
- Fall Time (Typ) :
- 9.5 ns
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 3.4A, 10V
- Length :
- 6.7056mm
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 50V
- Height :
- 6.22mm
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 79W
- Max Operating Temperature :
- 175°C
- Current Rating :
- -20A
- Published :
- 2004
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Turn On Delay Time :
- 9.5 ns
- Min Operating Temperature :
- -40°C
- Number of Terminations :
- 3
- Rise Time :
- 24ns
- Number of Pins :
- 3
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 21 ns
- FET Type :
- P-Channel
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 60A
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Power Dissipation :
- 79W
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 55V
- Transistor Application :
- AMPLIFIER
- Width :
- 2.3876mm
- Continuous Drain Current (ID) :
- -20A
- Voltage - Rated DC :
- -55V
- Lead Free :
- Lead Free
- Datasheets
- IRLU9343PBF

P-Channel Tube 105m Ω @ 3.4A, 10V 660pF @ 50V 47nC @ 10V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRLU9343PBF Description
This Digital Audio HEXFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. Other features of the MOSFET include an operating junction temperature of 175C and the ability to repeat avalanches. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.
IRLU9343PBF Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved
Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Multiple Package Options
Lead-Free
IRLU9343PBF Applications
Class D audio amplifier applications
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